AP85T08GS Advanced Power Electronics Corp., AP85T08GS Datasheet - Page 3

• Manufacturer Part Number: AP85T08GS
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP85T08GS

• Vds: 80V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 13
• Qg (nc): 63
• Qgs (nc): 23
• Qgd (nc): 38
• Id(a): 75
• Pd(w): 138
• Configuration: Single N
• Package: TO-263

250
200
150
100
14
13
12
11
10
50
40
30
20
10
50
0
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
0.2
j
=150
V
Reverse Diode
V
V
SD
3
4
DS
GS
o
0.4
, Source-to-Drain Voltage (V)
C
, Drain-to-Source Voltage (V)
Gate-to-Source Voltage (V)
0.6
T
C
= 25
6
6
0.8
o
C
T
I
1
T
C
D
8
9
=25
j
=20A
=25
V
G
o
=3.0V
1.2
7.0 V
o
5.0V
4.5V
C
10V
C
10
1.4
12
120
2.0
1.6
1.2
0.8
0.4
2.0
1.5
1.0
0.5
0.0
90
60
30
0
0
-50
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=45A
=10V
V
v.s. Junction Temperature
Junction Temperature
T
DS
T
j
3
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
T
C
= 150
6
50
50
o
AP85T08GS/P
C
100
9
100
o
V
C)
o
C)
G
=3.0V
7.0 V
5.0V
4.5V
10V
12
150
150
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