AP9997AGH-HF Advanced Power Electronics Corp., AP9997AGH-HF Datasheet - Page 3

• Manufacturer Part Number: AP9997AGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9997AGH-HF

• Vds: 120V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 185
• Qg (nc): 15
• Qgs (nc): 2.7
• Qgd (nc): 6.7
• Id(a): 8.8
• Pd(w): 34.7
• Configuration: Single N
• Package: TO-252

200
190
180
170
160
150
24
20
16
12
8
6
4
2
0
8
4
0
0
0
4
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
= 25
0.2
2
V
5
o
C
V
V
DS
Reverse Diode
SD
GS
T
, Drain-to-Source Voltage (V)
0.4
j
, Source-to-Drain Voltage (V)
Gate-to-Source Voltage (V)
=150
4
6
o
0.6
C
6
7
T
0.8
I
C
D
=25
=8A
8
8
T
o
C
j
1
=25
V
o
10
C
9
G
1.2
= 3.0V
8.0V
7.0V
6.0V
5.0V
10V
1.4
12
10
1.6
1.2
0.8
0.4
0.0
2.4
2.0
1.6
1.2
0.8
0.4
16
12
8
4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
C
G
D
= 150
=10V
=8A
v.s. Junction Temperature
Junction Temperature
V
o
T
T
DS
C
4
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
AP9997AGH-HF
50
8
50
100
12
100
o
o
V
C)
C)
G
= 3.0 V
8.0V
7.0V
6.0V
5.0V
10V
16
150
150
3