AP09N50I Advanced Power Electronics Corp., AP09N50I Datasheet - Page 3

• Manufacturer Part Number: AP09N50I
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP09N50I

• Vds: 500V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 750
• Qg (nc): 32
• Qgs (nc): 7
• Qgd (nc): 14
• Id(a): 9
• Pd(w): 36.8
• Configuration: Single N
• Package: TO-220CFM

1.2
1.1
0.9
0.8
20
16
12
10
8
4
0
8
6
4
2
0
1
-50
0
0
Fig 1. Typical Output Characteristics
Fig 3. Normalized BV
Fig 5. Forward Characteristic of
T
C
=25
0.2
Temperature
V
Reverse Diode
o
T
C
DS
V
j
0
SD
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
10
T
j
=150
0.6
o
50
C
DSS
0.8
20
v.s. Junction
100
o
T
V
C)
j
=25
G
1
= 5.0 V
o
9.0 V
7.0 V
10 V
6.0V
C
1.2
150
30
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.5
1.3
1.1
0.9
0.7
0.5
12
10
8
6
4
2
0
Fig 4. Normalized On-Resistance
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
V
C
I
G
=150
D
=10V
=6A
4
v.s. Junction Temperature
V
T
o
Junction Temperature
DS
C
j
T
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
j
8
, Junction Temperature (
12
50
50
16
20
AP09N50I
100
100
o
C )
o
V
C)
G
= 5.0V
24
9.0 V
7.0 V
6.0V
1 0 V
150
150
28
3