AP11N50I Advanced Power Electronics Corp., AP11N50I Datasheet - Page 4

• Manufacturer Part Number: AP11N50I
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP11N50I

• Vds: 500V
• Vgs: ±30V
• Rds(on) / Max(m?) Vgs@10v: 620
• Qg (nc): 43
• Qgs (nc): 8
• Qgd (nc): 20
• Id(a): 11
• Pd(w): 40
• Configuration: Single N
• Package: TO-220CFM

AP11N50I
1000
0.01
100
0.1
10
12
10
1
8
6
4
2
0
0.1
0
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Single Pulse
T
10%
90%
V
Operation in this
area limited by
V
C
GS
R
=25
DS
DS(ON)
10
V
o
DS
C
Q
1
t
,Drain-to-Source Voltage (V)
d(on)
G
, Total Gate Charge (nC)
20
t
r
V
DS
I
D
10
30
=400V
=6A
40
t
100
d(off)
t
50
f
100ms
100us
10ms
1ms
DC
1s
1000
60
Fig 10. Effective Transient Thermal Impedance
3200
2400
1600
800
0.01
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
0.02
10V
0.05
0.01
0.2
0.1
Duty factor = 0.5
V
Single Pulse
G
5
0.001
Q
V
GS
DS
9
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.01
Q
Q
13
Charge
G
GD
17
0.1
P
DM
Duty Factor = t/T
Peak T
21
j
= P
t
f=1.0MHz
DM
1
T
x R
25
thjc
+ T
C
C
C
Q
C
iss
oss
rss
29
10
4