MC74VHC1G50DFT2 ON Semiconductor, MC74VHC1G50DFT2 Datasheet - Page 2

• Manufacturer Part Number: MC74VHC1G50DFT2
• Description: IC BUFFER CMOS NON-INV SOT353
• Manufacturer: ON Semiconductor
• Series: 74VHCr

Specifications of MC74VHC1G50DFT2

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 1
• Number Of Bits Per Element: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MC74VHC1G50DFOSTR; MC74VHC1G50DFT2OS; MC74VHC1G50DFT2OS

1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
2. Tested to EIA/JESD22--A114--A
3. Tested to EIA/JESD22--A115--A
4. Tested to JESD22--C101--A
5. Tested to EIA/JESD78
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
V
V
V
I
I
I
I
P
θ
T
T
T
V
I
V
V
V
T
t
Symbol
IK
OK
OUT
CC
Latch--Up
r
Symbol
JA
stg
A
Temperature °C
L
J
CC
IN
OUT
D
ESD
CC
IN
OUT
, t
indicated may adversely affect device reliability. Functional operation under absolute--maximum--rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
f
Junction
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 s
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Latch--Up Performance
(Note 1)
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
Characteristics
and GND
Time, Years
Characteristics
Above V
117.8
47.9
20.4
9.4
4.2
2.0
1.0
CC
http://onsemi.com
V
V
and Below GND at 125°C (Note 5)
CC
CC
Charged Device Model (Note 4)
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
V
Human Body Model (Note 2)
OUT
2
Machine Model (Note 3)
< GND; V
SC--88A, TSOP--5
High or Low State
SC--88A, TSOP--5
1
1
OUT
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
V
CC
> V
Figure 3. Failure Rate vs. Time
= 0
CC
Min
--55
2.0
0.0
0.0
0
0
Junction Temperature
10
TIME, YEARS
--0.5 to V
--0.5 to +7.0
--0.5 to +7.0
--65 to +150
--0.5 to 7.0
> 2000
Value
> 200
+150
±500
+20
+25
+50
200
333
260
N/A
--20
+125
Max
V
100
5.5
5.5
20
CC
CC
100
+ 0.5
1000
Unit
ns/V
°C/W
Unit
mW
°C
mA
mA
mA
mA
mA
V
V
V
°C
°C
°C
V
V
V
V