IXFH14N60P3 IXYS, IXFH14N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFH14N60P3
• Description: Polar3 HiperFETS
• Manufacturer: IXYS

Specifications of IXFH14N60P3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.540
• Ciss, Typ, (pf): 1480
• Qg, Typ, (nc): 25
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 327
• Rthjc, Max, (ºc/w): 0.38
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
20
18
16
14
12
10
45
40
35
30
25
20
15
10
10
1
8
6
4
2
0
5
0
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
0.4
5
4.0
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
0.6
15
T
J
V
V
V
= 125ºC
T
SD
DS
GS
5.0
J
= 125ºC
0.7
20
- Volts
- Volts
- Volts
5.5
0.8
25
25ºC
6.0
T
0.9
J
30
= 25ºC
C iss
C oss
C rss
6.5
- 40ºC
1.0
35
7.0
1.1
40
100
0.1
30
25
20
15
10
10
10
5
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
2
= 150ºC
= 25ºC
= 7A
= 10mA
= 300V
R
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
4
5
IXFA14N60P3 IXFP14N60P3
Limit
6
Fig. 8. Transconductance
Fig. 10. Gate Charge
8
Q
10
G
- NanoCoulombs
I
D
V
10
- Amperes
DS
100
- Volts
12
15
IXFH14N60P3
14
T
J
= - 40ºC
16
25ºC
125ºC
20
18
20
100µs
1ms
1,000
22
25