IXFH16N60P3 IXYS, IXFH16N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFH16N60P3
• Description: Polar3 HiperFETS
• Manufacturer: IXYS

Specifications of IXFH16N60P3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 16
• Rds(on), Max, Tj=25°c, (?): 0.440
• Ciss, Typ, (pf): 1830
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 347
• Rthjc, Max, (ºc/w): 0.36
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
20
18
16
14
12
10
50
45
40
35
30
25
20
15
10
10
1
8
6
4
2
0
5
0
3.0
0.3
0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
0.4
3.5
= 1 MHz
5
0.5
10
4.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
T
4.5
J
T
J
= 125ºC
V
V
V
= 125ºC
SD
DS
GS
0.7
20
- Volts
- Volts
- Volts
5.0
0.8
25
25ºC
5.5
T
J
0.9
30
= 25ºC
6.0
C iss
C oss
C rss
- 40ºC
1.0
35
6.5
1.1
40
0.001
0.01
10
30
25
20
15
10
0.1
9
8
7
6
5
4
3
2
1
0
5
0
0.0001
1
0
0
V
I
I
Fig. 12. Maximum Transient Thermal Impedance
D
G
DS
2
= 8A
= 10mA
4
= 300V
4
0.001
IXFA16N60P3 IXFP16N60P3
8
6
Fig. 8. Transconductance
12
Fig. 10. Gate Charge
Pulse Width - Seconds
8
Q
0.01
G
- NanoCoulombs
I
D
16
10
- Amperes
12
20
0.1
IXFH16N60P3
14
24
T
J
= - 40ºC
16
25ºC
125ºC
28
IXYS REF: F_16N60P3(W5)11-29-11
1
18
32
20
10
22
36