MMIX1F360N15T2 IXYS, MMIX1F360N15T2 Datasheet

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MMIX1F360N15T2

Manufacturer Part Number
MMIX1F360N15T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of MMIX1F360N15T2

Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
235
Rds(on), Max, Tj=25°c, (?)
0.0044
Ciss, Typ, (pf)
47500
Qg, Typ, (nc)
715
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
680
Rthjc, Max, (k/w)
0.22
Package Style
SMPD
TrenchT2
HiperFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
dv/dt
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GigaMOS
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 100A, Note 1
GS
DS
= 0V
DSS
= 0V
, T
J
GS
≤ 175°C
TM
= 1MΩ
Preliminary Technical Information
Note 2, T
MMIX1F360N15T2
J
JM
= 150°C
50..200 / 11..45
150
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
2500
235
150
150
±20
±30
900
180
680
175
300
260
Typ.
20
8
3
±200 nA
Max.
5.0
4.4 mΩ
50
5 mA
N/lb.
V/ns
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
-
-
-
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
175°C Operating Temperature
Very High Current Handling
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Capability
Very Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
S
Isolated Tab
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
G
DS(on)
D = Drain
150V
235A
4.4mΩ Ω Ω Ω Ω
150ns
DS100434A(03/12)
(2500V~)
D
D

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MMIX1F360N15T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 100A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information MMIX1F360N15T2 TM Maximum Ratings 150 = 1MΩ 150 GS ±20 ±30 235 900 JM 180 3 680 ≤ 175° -55 ... +175 175 -55 ... +175 300 ...

Page 2

... I = 180A 185 DSS D 200 0.05 30 Characteristic Values Min. Typ 500 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1F360N15T2 Max Ω 0.22 °C/W °C/W °C/W Max. 360 A 1440 A 1.2 V 150 6,404,065 B1 ...

Page 3

... Package Outline © 2012 IXYS CORPORATION, All Rights Reserved MMIX1F360N15T2 PIN Gate 5-12 = Source 13-24 = Drain ...

Page 4

... Value vs. D 240 200 T = 175ºC J 160 120 25º 200 250 300 350 MMIX1F360N15T2 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V ...

Page 5

... IXYS CORPORATION, All Rights Reserved = 150ºC J 25ºC - 40ºC 4.5 5.0 5 25ºC J 0.7 0.8 0.9 1.0 1.1 1000 C iss C oss C rss Volts MMIX1F360N15T2 Fig. 8. Transconductance 450 400 350 300 250 200 150 100 100 120 I - Amperes D Fig. 10. Gate Charge 10 V ...

Page 6

... 75V 700 DS 200 600 180 500 160 400 140 300 120 200 100 100 140 160 180 200 MMIX1F360N15T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 75V 25º 125º 100 120 140 ...

Page 7

... IXYS CORPORATION, All Rights Reserved Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.001 0.01 0.1 Pulse Width - Seconds MMIX1F360N15T2 1 10 100 IXYS REF: MMIX1F360N15T2 (9V)01-16-12 ...

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