MMIX1F360N15T2 IXYS, MMIX1F360N15T2 Datasheet - Page 6

• Manufacturer Part Number: MMIX1F360N15T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of MMIX1F360N15T2

• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 235
• Rds(on), Max, Tj=25°c, (?): 0.0044
• Ciss, Typ, (pf): 47500
• Qg, Typ, (nc): 715
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 680
• Rthjc, Max, (k/w): 0.22
• Package Style: SMPD

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
700
600
500
400
300
200
100
700
600
500
400
300
200
100
340
300
260
220
180
140
100
0
0
40
25
1
Fig. 15. Resistive Turn-on Switching Times vs.
t
T
V
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
r
J
DS
DS
= 125ºC, V
G
35
2
60
= 75V
= 1Ω , V
= 75V
Fig. 13. Resistive Turn-on Rise Time vs.
45
3
GS
80
GS
t
d(on)
= 10V
= 10V
55
4
T
- - - -
J
Junction Temperature
Gate Resistance
100
T
I
= 25ºC
D
J
Drain Current
= 100A
- Degrees Centigrade
R
I
65
D
5
G
I
- Amperes
D
- Ohms
120
T
= 200A
J
= 125ºC
75
6
140
R
V
t
85
f
G
DS
7
= 1Ω, V
I
I
= 75V
D
D
= 100A
= 200A
160
95
8
GS
= 10V
t
d(off)
105
180
9
- - - -
115
200
10
210
180
150
120
90
60
30
0
240
220
200
180
160
140
120
100
125
300
260
220
180
140
100
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
60
0
40
25
1
Fig. 18. Resistive Turn-off Switching Times vs.
Fig. 16. Resistive Turn-off Switching Times vs.
R
V
t
R
V
t
T
V
35
DS
G
f
DS
f
J
DS
G
2
= 125ºC, V
= 1Ω , V
60
= 1Ω, V
= 75V
= 75V
= 75V
Fig. 14. Resistive Turn-on Rise Time vs.
45
I
D
3
GS
GS
= 200A
T
80
GS
t
= 10V
= 10V
J
t
d(off)
d(off)
55
= 25ºC
Junction Temperature
= 10V
I
T
4
D
- - - -
J
- - - -
Gate Resistance
= 200A, 100A
- Degrees Centigrade
MMIX1F360N15T2
100
65
R
Drain Current
T
5
G
J
I
D
= 125ºC
- Ohms
- Amperes
75
120
6
85
I
D
= 100A
140
7
95
8
105
160
9
115
180
10
125
900
800
700
600
500
400
300
200
100
220
200
180
160
140
120
100
80
200