IXTQ86N25T IXYS, IXTQ86N25T Datasheet

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IXTQ86N25T

Manufacturer Part Number
IXTQ86N25T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTQ86N25T

Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
86
Rds(on), Max, Tj=25°c, (?)
0.037
Ciss, Typ, (pf)
5330
Qg, Typ, (nc)
105
Trr, Typ, (ns)
156
Trr, Max, (ns)
-
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-3P
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
AS
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-3P)
Mounting force (PLUS220)
TO-247
TO-3P
PLUS220
V
V
V
V
V
V
Test Conditions
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
GS
DSS
, I
D
D
D
= 250μA
= 1mA
= 0.5 • I
DS
= 0V
D25
GS
, Notes 1, 2
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTH86N25T
IXTQ86N25T
IXTV86N25T
11..65 / 2.5..14.6
Characteristic Values
-55 ... +150
-55 ... +150
250
Min.
Maximum Ratings
1.13 / 10
3
± 30
250
250
190
540
150
300
260
1.5
6.0
5.5
4.0
86
75
10
Typ.
± 200 nA
Nm/lb.in.
250 μA
Max.
37 mΩ
5
3 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
g
J
TO-247 (IXTH)
TO-3P (IXTQ)
PLUS220 (IXTV)
V
I
R
Features
Advantages
Applications
D25
Avalanche rated
International standard packages
Low package inductance
- easy to drive and to protect
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G = Gate
S = Source
G
G
S
D
= 250V
= 86A
D
≤ ≤ ≤ ≤ ≤
S
S
37mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
DS99784A(10/07)
(TAB
(TAB)
(TAB)

Related parts for IXTQ86N25T

IXTQ86N25T Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH86N25T IXTQ86N25T IXTV86N25T Maximum Ratings 250 = 1MΩ 250 GS ± 190 JM 10 1.5 540 -55 ... +150 150 -55 ... +150 300 260 1. 11..65 / 2.5..14.6 6.0 5.5 4.0 Characteristic Values Min ...

Page 2

... DSS D 28 0.25 Characteristic Values Min. Typ. JM 156 21 1.7 Kelvin test contact location must be DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH86N25T IXTQ86N25T TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter Min 4 2 ...

Page 3

... V = 10V 43A Value 125º 25ºC J 120 140 160 180 200 IXTH86N25T IXTQ86N25T Fig. 2. Extended Output Characteristics @ 25ºC 200 V = 10V GS 180 8V 160 7V 140 120 100 Volts DS Fig ...

Page 4

... Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 5.2 5.4 5.6 5.8 6 6.2 6 25ºC J 0.9 1 1.1 1.2 1.3 C iss C oss C rss IXTH86N25T IXTQ86N25T Fig. 8. Transconductance 110 100 40º 25º 125º Amperes D Fig ...

Page 5

... V = 15V 125V IXTH86N25T IXTQ86N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 35 = 3.3 Ω 15V 125V Amperes D Fig. 16. Resistive Turn-off Switching Times vs ...

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