IXTQ86N25T IXYS, IXTQ86N25T Datasheet - Page 4

• Manufacturer Part Number: IXTQ86N25T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTQ86N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.037
• Ciss, Typ, (pf): 5330
• Qg, Typ, (nc): 105
• Trr, Typ, (ns): 156
• Trr, Max, (ns): -
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-3P

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
300
250
200
150
100
100
90
80
70
60
50
40
30
20
10
50
10
0
0
3.8
0.4
0
4
f = 1 MHz
0.5
5
4.2
Fig. 9. Forward Voltage Drop of
0.6
4.4
10
Fig. 7. Input Admittance
4.6
Fig. 11. Capacitance
0.7
T
Intrinsic Diode
J
4.8
15
= 125ºC
V
V
V
GS
SD
T
DS
0.8
J
= 125ºC
- Volts
- Volts
5
- Volts
- 40ºC
20
25ºC
5.2
C iss
C oss
C rss
0.9
5.4
25
T
J
1
5.6
= 25ºC
30
5.8
1.1
6
35
1.2
6.2
6.4
1.3
40
1.00
0.10
0.01
110
100
90
80
70
60
50
40
30
20
10
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
10
DS
10
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
= 125V
0.001
20
20
Fig. 8. Transconductance
IXTH86N25T IXTQ86N25T
30
30
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
40
- NanoCoulombs
0.01
I
D
40
Impedance
- Amperes
T
J
50
= - 40ºC
50
25ºC
60
125ºC
0.1
60
70
IXTV86N25T
70
80
1
80
90
90
100
10
110
100