IXFH86N30T IXYS, IXFH86N30T Datasheet - Page 4

• Manufacturer Part Number: IXFH86N30T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFH86N30T

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.043
• Ciss, Typ, (pf): 11300
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
140
120
100
240
200
160
120
100
80
60
40
20
80
40
10
0
0
3.0
0.3
0
f
= 1 MHz
0.4
5
3.5
0.5
Fig. 9. Forward Voltage Drop of
10
0.6
Fig. 7. Input Admittance
4.0
Fig. 11. Capacitance
T
J
15
Intrinsic Diode
= 125ºC
0.7
V
V
SD
DS
V
GS
- Volts
- Volts
4.5
0.8
20
- Volts
T
J
0.9
= 125ºC
25
- 40ºC
25ºC
T
5.0
J
= 25ºC
1.0
30
C iss
C oss
C rss
1.1
5.5
35
1.2
6.0
1.3
40
1,000.0
100.0
10.0
200
180
160
140
120
100
1.0
0.1
10
80
60
40
20
0
9
8
7
6
5
4
3
2
1
0
0
0
1
T
T
Single Pulse
V
I
I
J
C
D
G
= 150ºC
DS
= 25ºC
= 43A
= 10mA
20
R
= 150V
DS(
20
Fig. 12. Forward-Bias Safe Operating Area
on
)
Limit
40
40
Fig. 8. Transconductance
60
10
Fig. 10. Gate Charge
Q
G
- NanoCoulombs
I
D
- Amperes
60
V
80
DS
- Volts
100
80
IXFH86N30T
IXFT86N30T
120
100
T
100
J
100m
= - 40ºC
125ºC
140
25ºC
120
25µs
100µs
1ms
10ms
160
1000
140
180