IXXH50N60B3D1 IXYS, IXXH50N60B3D1 Datasheet

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IXXH50N60B3D1

Manufacturer Part Number
IXXH50N60B3D1
Description
XPT 600V
Manufacturer
IXYS
Datasheet

Specifications of IXXH50N60B3D1

Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
120
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
135
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.2
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
30
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
XPT
GenX3
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
sc
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
IGBT 600V
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TM
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, V
= 22Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 36A, V
w/ Diode
= 250μA, V
CES
, V
GE
CE
VJ
GE
GE
= ±20V
= 360V, T
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
J
= 1MΩ
G
= 150°C
= 5Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXXH50N60B3D1
Min.
600
Characteristic Values
3.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
1.55
1.80
= 100
120
200
±20
±30
200
V
600
175
300
260
600
600
10
50
30
25
CES
6
±100
1.80
Max.
Nm/lb.in.
5.5
25
3 mA
mJ
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for 5-30kHz Switching
Square RBSOA
Anti-Parallel Ultra Fast Diode
Avalanche Capability
Short Circuit Capability
International Standard Package
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
= 600V
= 50A
= 135ns
≤ ≤ ≤ ≤ ≤ 1.80V
C
Tab = Collector
Tab
= Collector
DS100302(02/11)

Related parts for IXXH50N60B3D1

IXXH50N60B3D1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 36A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH50N60B3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 120 50 30 200 25 200 = 5Ω 100 G CM ≤ CES = 150° ...

Page 2

... 100° 100°C 100 J = 30V 25 R (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH50N60B3D1 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter 150 ns Min. Max ...

Page 3

... T = 25º 72A IXXH50N60B3D1 Fig. 2. Extended Output Characteristics @ 15V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 150º ...

Page 4

... C oes res 0.4 0.1 25µs 100µs 1ms 10ms DC 0.01 100 1000 0.00001 IXXH50N60B3D1 Fig. 8. Gate Charge V = 300V 36A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º Ω < 10V / ns ...

Page 5

... V = 15V G GE 200 180 V = 360V CE 180 160 160 140 140 120 120 100 100 IXXH50N60B3D1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off on T Ω 15V 360V ...

Page 6

... I = 72A 100 125 150 IXXH50N60B3D1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 360V 150º 25º ...

Page 7

... V = 300V 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 26. Recovery Time t -di /dt F 0.01 0.1 t IXXH50N60B3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt F Fig. 24. Peak Reverse Current I ...

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