IXXH50N60B3D1 IXYS, IXXH50N60B3D1 Datasheet - Page 7

• Manufacturer Part Number: IXXH50N60B3D1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH50N60B3D1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 120
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 135
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.2
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

Fig. 22. Forward Current I
Fig. 25. Dynamic Parameters Q
Z
Fig. 28. Transient Thermal Resistance Junction to Case
© 2011 IXYS CORPORATION, All Rights Reserved
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
Versus T
VJ
=150°C
=100°C
40
I
1
RM
VJ
0.0001
Q
80
r
2
T
F
VJ
V
T
Versus V
120
VJ
F
= 25°C
r
, I
3
°C
0.001
RM
V
160
F
t
Q
rr
1000
r
800
600
400
200
Fig. 26. Recovery Time t
nC
Fig. 23. Reverse Recovery Charge Q
Versus -di
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
-di
F
/dt
F
I
I
I
/dt
F
F
F
= 60A
= 30A
= 15A
I
I
I
400
F
F
F
= 60A
= 30A
= 15A
0.1
T
V
-di
VJ
R
600
F
-di
= 100°C
/dt
= 300V
t
F
rr
/dt
A/μs
Versus
s
800
A/μs
DSEP 29-06
1000
1000
1
r
I
V
RM
FR
30
25
20
15
10
20
15
10
A
V
5
0
5
0
Fig. 27. Peak Forward Voltage V
Constants for Z
Fig. 24. Peak Reverse Current I
0
0
IXXH50N60B3D1
1
2
3
i
T
V
VJ
R
200
200
= 100°C
= 300V
t
fr
and t
Versus -di
T
I
F
VJ
I
I
I
F
F
F
400
400
R
0.502
0.193
0.205
= 30A
= 100°C
= 60A
= 30A
= 15A
fr
thi
V
Versus di
thJC
FR
(K/W)
600
600
calculation:
F
di
-di
/dt
F
IXYS REF: IXX_50N60B3D1(5D)02-23-11
/dt
F
/dt
F
A/μs
A/μs
800
800
/dt
t
0.0052
0.0003
0.0162
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
μs
t
fr