IXGT64N60A3 IXYS, IXGT64N60A3 Datasheet

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IXGT64N60A3

Manufacturer Part Number
IXGT64N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGT64N60A3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
64
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
222
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.0
Rthjc, Max, Igbt, (°c/w)
0.27
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
GenX3
Ultra-lowVsat PT IGBTs for up to
5 kHz switching
Symbol
V
V
V
V
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
I
V
V
V
I
T
T
Continuous
Transient
T
T
V
Clamped inductive load @
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
C
C
C
TM
C
J
C
C
C
CE
GE
CE
GE
= 250μA, V
= 250μA, V
= 50A, V
= 25°C to 150°C, R
= 25°C to 150°C
= 110°C
= 25°C
= 25°C, 1ms
= 0V, V
= V
= 0V
= 15V, T
600V IGBT
CES
GE
GE
VJ
GE
CE
= 15V, Note 1
= ± 20V
= 125°C, R
= V
= 0V
GE
GE
= 1M
G
Preliminary Technical Information
= 3
600V
Ω
Ω
T
J
= 125°C
IXGH64N60A3
IXGT64N60A3
600
-55 ... +150
-55 ... +150
Characteristic Values
3.0
I
Min.
CM
1.13/10
Maximum Ratings
= 100
± 20
± 30
600
600
400
460
150
300
260
64
Typ.
6
5
1.20
Max.
±100
1.35
Nm/lb.in.
5.0
500
50
μA
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
g
g
TO-247 (IXGH)
TO-268 (IXGT)
G = Gate
E = Emitter
V
I
V
Features
Advantages
Applications
C110
Optimized for low conduction losses
Square RBSOA
International standard packages
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
C
G
≤ ≤ ≤ ≤ ≤ 1.35V
= 600V
= 64A
E
E
C
TAB = Collector
C (TAB)
DS100003(06/08)
C (TAB)
= Collector

Related parts for IXGT64N60A3

IXGT64N60A3 Summary of contents

Page 1

... 0V ± 20V GES 50A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH64N60A3 IXGT64N60A3 Maximum Ratings 600 Ω 600 ± 20 ± 400 Ω 100 G CM ≤ 600V 460 -55 ...

Page 2

... Q 5. 4.32 S 6.15 BSC ° 0.27 C/W ° C/W TO-268 (IXGT) Outline 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXGT64N60A3 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 ...

Page 3

... V - Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance 125ºC J 25º 40º 4.0 4.5 5.0 5.5 6.0 6 Volts GE IXGH64N60A3 IXGT64N60A3 CE(sat 100A 50A 25A C 75 100 125 150 7.0 7.5 8.0 8.5 ...

Page 4

... Fig. 10. Reverse-Bias Safe Operating Area 125º 3Ω < 10V / 100 150 200 250 300 350 400 V - Volts CE 0.1 1 IXGH64N60A3 IXGT64N60A3 120 140 160 180 450 500 550 600 650 10 IXYS REF: G_64N60A3(75) 7-02-08-B ...

Page 5

... Switching Times vs. Junction Temperature d(off ) R = 3Ω 15V 480V 100A, 50A Degrees Centigrade J IXGH64N60A3 IXGT64N60A3 100A 50A 105 115 125 1000 900 800 700 600 500 ...

Page 6

... Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature d(on) Ω 15V 480V 100A 50A Degrees Centigrade J IXGH64N60A3 IXGT64N60A3 105 115 125 IXYS REF: G_64N60A3(75) 7-02-08-B ...

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