IXGT64N60A3 IXYS, IXGT64N60A3 Datasheet - Page 4

• Manufacturer Part Number: IXGT64N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGT64N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 222
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.0
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

IXYS reserves the right to change limits, test conditions and dimensions.
10,000
1,000
1.00
0.10
0.01
110
100
100
90
80
70
60
50
40
30
20
10
10
0.0001
0
0
0
f
= 1 MHz
20
5
40
Fig. 7. Transconductance
10
Fig. 9. Capacitance
60
15
I
T
C
J
- Amperes
0.001
V
= - 40ºC
80
CE
20
- Volts
C oes
C res
100
C ies
25ºC
25
Fig. 11. Maximum Transient Thermal Impedance
125ºC
120
30
140
160
35
0.01
Pulse Width - Seconds
180
40
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
0.1
150
T
R
dV / dt < 10V / ns
V
I
I
J
G
C
G
CE
20
= 125ºC
= 3Ω
= 50A
= 10 mA
= 300V
200
40
250
Fig. 8. Gate Charge
60
Q
300
G
V
- NanoCoulombs
CE
350
80
- Volts
1
400
100
450
IXGH64N60A3
IXGT64N60A3
IXYS REF: G_64N60A3(75) 7-02-08-B
120
500
140
550
160
600
10
650
180