IXER20N120 IXYS, IXER20N120 Datasheet - Page 2

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IXER20N120

Manufacturer Part Number
IXER20N120
Description
3rd Generation NPT Discrete IGBTs
Manufacturer
IXYS
Datasheet

Specifications of IXER20N120

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
29
Ic90, Tc=90°c, Igbt, (a)
19
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
175
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (°c/w)
0.96
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
ISOPLUS247™ Outline
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
Diode [D version only]
Symbol
I
I
Symbol
V
I
t
R
R
Module
Symbol
T
T
V
F
Symbol
C
Weight
F25
F90
RM
rr
F
VJ
stg
C
ISOL
thJC
thCH
P
Conditions
T
T
Conditions
I
V
di
with heatsink compound
Conditions
I
mounting force with clip
Conditions
coupling capacity between shorted
pins and mounting tab in the case
F
ISOL
C
C
R
F
= 20 A; V
= 25°C
= 90°C
= 600 V;
/dt = -400A/µs;
<  mA; 50/60 Hz
GE
L = 00 µH; T
= 0 V;
I
F
= 5 A; V
T
T
VJ
VJ
VJ
= 25°C
= 25°C
= 25°C
GE
= 0 V
min.
min.
Characteristic Values
Characteristic Values
Maximum Ratings
Maximum Ratings
typ.
typ.
30
2.6
2.0
2.3
.3
6
30
-55...+50
-55...+50
6
20...20
max.
2500
max.
3.0
25
5
K/W
V~
pF
°C
°C
ns
N
A
A
V
V
A
g
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC
außer Schraubloch und L
This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD
except screw hole and except L
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff- f -
oberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of
device bottom side
max
.
max
IXER 20N120
IXER 20N120D1
.
200808a
2 - 4

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