IXER20N120 IXYS, IXER20N120 Datasheet - Page 4

• Manufacturer Part Number: IXER20N120
• Description: 3rd Generation NPT Discrete IGBTs
• Manufacturer: IXYS

Specifications of IXER20N120

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 29
• Ic90, Tc=90°c, Igbt, (a): 19
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.8
• Tfi, Typ, Igbt, (ns): 175
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (°c/w): 0.96
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20
16
12
50
40
30
20
10
10
8
4
0
8
6
4
2
0
0
0
0
0
Fig. 7
times versus collector current
Fig. 9
Fig.  Reverse biased safe operating area
E
V
V
R
T
on
CE
GE
VJ
G
200
= 600 V
= 68
= ±15 V
= 125°C
50
RBSOA
Typ. turn on energy and switching
Typ. turn on energy vs gate resistor
10
400
R
T
VJ
G
100
= 68
= 125°C
600
V
R
I
CE
C
G
20
V
V
I
T
C
VJ
[A]
CE
GE
[ ]
[V]
800 1000 1200 1400
= 600 V
= ±15 V
= 20 A
= 125°C
150
30
200
t
r
t
d(on)
250
40
250
200
150
100
50
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
0.001
1
0
0
Fig. 8
Fig.0
Fig. 2 Typ. transient thermal impedance
Thermal Analysis Model
V
V
R
T
E
VJ
CE
GE
G
R1
off
C1
= 600 V
= 68
= ±15 V
= 125°C
E
50
off
Typ. turn off energy and switching
times versus collector current
Typ. turn off energy and switching
times versus gate resistor
0.01
10
R2
C2
V
V
I
T
C
VJ
CE
GE
= 600 V
= ±15 V
= 20 A
100
= 125°C
R3
C3
 0.93 0.0060 0.497 0.00782
2 0.57 0.022
3 0.059 2.92
4 0.634 0.34
R
t [ms]
I
C
G
0.1
20
R
[A]
R4
[ ]
i
C4
IGBT
IXER 20N120
IXER 20N120D1
150
τ
Zth t ( )
i
30
=
1
.49 0.043
0.72
0.945 0.0
i
∑
200
n
=
R
1
τ
i
i
R
=
t
Diode
d(off)
i
R
0.96
i


A
⋅
1 exp
C
diode
−
IGBT
i
t
d(off)
t
τ
f
i
t


−
f
250
40
τ
10
t
i
200808a




400
350
300
250
200
150
100
50
0
1250
1000
750
500
250
0
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