2SC1623

Manufacturer Part Number2SC1623
ManufacturerNEC
2SC1623 datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (61Kb)Embed
Next
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• High DC Current Gain: h
(V
= 6.0 V, I
= 1.0 mA)
CE
C
• High Voltage: V
= 50 V
CEO
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature P
Maximum Temperatures
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (T
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Saturation Voltage
Base Emitter Voltage
Gain Bandwidth Product
Output Capacitance
* Pulsed: PW
350 s, Duty Cycle
h
Classification
FE
Marking
L4
h
90 to 180
FE
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
DATA SHEET
MINI MOLD
= 200 TYP.
FE
V
60
V
CBO
V
50
V
CEO
V
5.0
V
EBO
I
100
mA
C
200
mW
T
T
150
˚C
j
T
–55 to +150 ˚C
stg
= 25 ˚C)
A
SYMBOL
MIN.
TYP.
MAX.
I
0.1
CBO
I
0.1
EBO
h
90
200
600
FE
V
0.15
0.3
CE(sat)
V
0.86
1.0
BE(sat)
V
0.55
0.62
0.65
BE
f
250
T
C
3.0
ob
2 %
L5
L6
L7
135 to 270
200 to 400
300 to 600
SILICON TRANSISTOR
2SC1623
PACKAGE DIMENSIONS
in millimeters
2.8 ± 0.2
+0.1
1.5
0.65
–0.15
2
3
1
Marking
1: Emitter
2: Base
3: Collector
UNIT
TEST CONDITIONS
A
V
= 60 V, I
= 0
CB
E
A
V
= 5.0 V, I
= 0
EB
C
V
= 6.0 V, I
= 1.0 mA*
CE
C
V
I
= 100 mA, I
= 10 mA*
C
B
V
I
= 100 mA, I
= 10 mA*
C
B
V
V
= 6.0 V, I
= 1.0 mA*
CE
C
MHz
V
= 6.0 V, I
= –10 mA
CE
E
pF
V
= 6.0 V, I
= 0, f = 1.0 MHz
CB
E
©
1984