2SK2595 Renesas Electronics Corporation., 2SK2595 Datasheet

no-image

2SK2595

Manufacturer Part Number
2SK2595
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2595
Manufacturer:
MURATA
Quantity:
18 000
2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
Outline
Note:
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.4.00, Feb.14.2005, page 1 of 13
High power output, High gain, High efficiency
PG = 7.8 dB, Pout = 5.37 W, D = 50% min. (f = 836.5 MHz)
Compact package capable of surface mounting
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
2. Value at Tc = 25 C
Marking is "AX".
Item
10 s, duty cycle
PLSS0003ZA-A
(Previous code : RP8P)
1%
G
I
D(pulse)
Symbol
Pch
V
V
Tstg
Tch
DSS
GSS
I
D
Note2
Note1
S
D
1
2
– 45 to +150
Ratings
150
1.1
17
20
10
5
3
1. Gate
2. Source
3. Drain
REJ03G0206-0400
Unit
W
V
V
A
A
C
C
Feb.14.2005
(Ta = 25°C)
Rev.4.00

Related parts for 2SK2595

2SK2595 Summary of contents

Page 1

... Silicon N-Channel MOS FET UHF Power Amplifier Features High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5. 50% min 836.5 MHz) Compact package capable of surface mounting Outline PLSS0003ZA-A (Previous code : RP8P) Note: Marking is "AX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. ...

Page 2

... Electrical Characteristics Item Symbol Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage V Input capacitance Output capacitance Output Power Drain Efficiency Main Characteristics Maximum Channel Power Dissipation Curve 100 Case Temperature Typical Transfer Characteristics ...

Page 3

... Drain to Source Saturation Voltage vs. Drain Current 0.5 0.2 0 –25 C 0.05 0.02 0.01 0.5 0.1 0.1 0.2 1 Drain Current Input Capacitance vs. Gate to Source Voltage - Gate to Source Voltage V Reverse Transfer Capacitance vs. Drain to Gate Voltage 0.1 0.2 0 Drain to Gate Voltage V Rev.4.00, Feb.14.2005, page Gate to Source Cutoff Voltage vs ...

Page 4

... S Parameter vs. Frequency 1 –.2 –.4 –.6 –.8 –1 Test condition 2550 MHz (50 MHz step 500 mA Parameter vs. Frequency 12 90° 135° 180° –135° –90° Test condition ...

Page 5

... S Parameter S11 f (MHz) Mag Deg 50 0.814 -126.4 100 0.818 -149.2 150 0.830 -156.6 200 0.849 -160.6 250 0.866 -163.2 300 0.879 -165.0 350 0.893 -166.5 400 0.902 -167.7 450 0.909 -168.7 500 0.917 -169.5 550 0.921 -170.3 600 0.925 -170.9 650 0 ...

Page 6

... S11 f (MHz) Mag Deg 50 0.813 -123.5 100 0.819 -147.4 150 0.831 -155.2 200 0.852 -159.6 250 0.868 -162.4 300 0.881 -164.4 350 0.895 -166.0 400 0.904 -167.3 450 0.911 -168.4 500 0.918 -169.3 550 0.923 -170.1 600 0.926 -170.6 650 ...

Page 7

... S11 f (MHz) Mag Deg 50 0.817 -120.2 100 0.820 -145.5 150 0.836 -153.9 200 0.856 -158.7 250 0.873 -161.8 300 0.886 -164.0 350 0.899 -165.7 400 0.907 -167.0 450 0.914 -168.1 500 0.920 -169.1 550 0.923 -169.9 600 0.927 -170.5 650 ...

Page 8

... S11 f (MHz) Mag Deg 50 0.835 -112.4 100 0.840 -140.6 150 0.852 -150.8 200 0.872 -156.6 250 0.886 -160.3 300 0.896 -162.9 350 0.907 -164.9 400 0.914 -166.4 450 0.919 -167.6 500 0.925 -168.6 550 0.928 -169.6 600 0.930 -170.2 650 ...

Page 9

... S11 f (MHz) Mag Deg 50 0.818 -126.6 100 0.829 -149.6 150 0.840 -157.0 200 0.859 -161.1 250 0.873 -163.7 300 0.885 -165.6 350 0.898 -167.0 400 0.906 -168.2 450 0.912 -169.2 500 0.919 -170.0 550 0.923 -170.7 600 0.926 -171.3 650 ...

Page 10

... S11 f (MHz) Mag Deg 50 0.819 -123.7 100 0.826 -147.5 150 0.841 -155.4 200 0.861 -159.9 250 0.876 -162.9 300 0.888 -164.9 350 0.901 -166.5 400 0.908 -167.8 450 0.914 -168.8 500 0.920 -169.7 550 0.924 -170.5 600 0.926 -171.0 650 ...

Page 11

... S11 f (MHz) Mag Deg 50 0.821 -120.3 100 0.827 -145.4 150 0.844 -153.9 200 0.865 -158.9 250 0.881 -162.2 300 0.893 -164.4 350 0.904 -166.2 400 0.912 -167.6 450 0.917 -168.7 500 0.922 -169.6 550 0.926 -170.5 600 0.928 -171.1 650 ...

Page 12

... S11 f (MHz) Mag Deg 50 0.838 -112.1 100 0.844 -140.2 150 0.859 -150.6 200 0.878 -156.6 250 0.890 -160.4 300 0.899 -163.0 350 0.909 -165.0 400 0.914 -166.5 450 0.919 -167.7 500 0.924 -168.7 550 0.927 -169.6 600 0.929 -170.2 650 ...

Page 13

... JEITA Package Code RENESAS Code − PLSS0003ZA-A Ordering Information Part Name 2SK2595AX 1000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00, Feb.14.2005, page Previous Code MASS[Typ ...

Page 14

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

Related keywords