2SK2596 Renesas Electronics Corporation., 2SK2596 Datasheet

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2SK2596

Manufacturer Part Number
2SK2596
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2596
Manufacturer:
HITACHI/日立
Quantity:
20 000
2SK2596
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
Outline
Note:
Absolute Maximum Ratings
Notes: 1. PW
REJ03G0207-0400 Rev.4.00 Nov 08, 2007
Page 1 of 9
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
High power output, High gain, High efficiency
PG = 12.2 dB, Pout = 1.05 W, D = 45%min. (f = 836.5 MHz)
Compact package capable of surface mounting
2. Value at Tc = 25°C
Marking is “BX”.
10 s, duty cycle
Item
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK
1
1%
2, 4
3
R
)
Symbol
I
V
V
D(pulse)
Tstg
Pch
Tch
DSS
GSS
I
D
3
Note2
Note1
2
1
*UPAK is a trademark of Renesas Technology Corp.
4
–45 to +150
Ratings
±10
150
0.4
17
1
3
1. Gate
2. Source
3. Drain
4. Source
REJ03G0207-0400
Unit
Nov 08, 2007
°C
°C
W
V
V
A
A
(Ta = 25°C)
Rev.4.00

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2SK2596 Summary of contents

Page 1

... Silicon N-Channel MOS FET UHF Power Amplifier Features High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1. 45%min 836.5 MHz) Compact package capable of surface mounting Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK 1 Note: Marking is “BX”. Absolute Maximum Ratings ...

Page 2

... Electrical Characteristics Item Symbol Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Drain Efficiency Main Characteristics Maximum Channel Power Dissipation Curve 100 Case Temperature Tc (°C) Typical Transfer Characteristics 1 -25° ...

Page 3

... Drain to Source Saturation Voltage vs. Drain Current Pulse Test 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 Drain Current I Input Capacitance vs. Gate to Source Voltage - Gate to Source Voltage V Reverse Transfer Capacitance vs. Drain to Gate Voltage 100 MHz 1 0 ...

Page 4

... S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Test condition 100 to 2500 MHz (50 MHz step) S Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° -90° Test condition 100 to 2500 MHz (50 MHz step) REJ03G0207-0400 Rev ...

Page 5

... S Parameter S11 f (MHz) MAG ANG(deg.) 100 0.875 -71.1 150 0.825 -95.7 200 0.807 -110.8 250 0.806 -121.1 300 0.811 -129.1 350 0.824 -135.7 400 0.840 -141.1 450 0.853 -145.4 500 0.860 -149.1 550 0.868 -152.6 600 0.874 -155.8 650 0.883 -158.6 700 ...

Page 6

... S Parameter S11 f (MHz) MAG ANG(deg.) 100 0.883 -68.6 150 0.851 -92.2 200 0.836 -108.2 250 0.828 -119.0 300 0.829 -127.4 350 0.839 -134.4 400 0.852 -139.9 450 0.863 -144.3 500 0.869 -148.1 550 0.875 -151.8 600 0.880 -155.0 650 0.887 -157.8 700 ...

Page 7

... S Parameter S11 f (MHz) MAG ANG(deg.) 100 0.895 -67.4 150 0.866 -90.5 200 0.850 -106.8 250 0.842 -117.9 300 0.840 -126.6 350 0.847 -133.6 400 0.858 -139.3 450 0.869 -143.8 500 0.874 -147.7 550 0.879 -151.3 600 0.884 -154.6 650 0.891 -157.5 700 ...

Page 8

... S Parameter S11 f (MHz) MAG ANG(deg.) 100 0.932 -62.1 150 0.921 -85.1 200 0.898 -101.9 250 0.882 -114.0 300 0.877 -123.5 350 0.879 -131.1 400 0.884 -137.2 450 0.892 -141.9 500 0.893 -146.0 550 0.893 -150.2 600 0.895 -153.4 650 0.900 -156.4 700 ...

Page 9

... PLZZ0004CA-A 4.5 ± 0.1 1.8 Max 0.53 Max 0.48 Max 1.5 1.5 Ordering Information Part Name 2SK2596BXTL-E 1000 pcs. Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Page Package Name MASS[Typ ...

Page 10

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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