2SK2651 Fuji Electric holdings CO.,Ltd, 2SK2651 Datasheet
2SK2651
Manufacturer Part Number
2SK2651
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK2651.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2651
Manufacturer:
FUJITSU
Quantity:
12 500
Part Number:
2SK2651
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Company:
Part Number:
2SK2651-01MR
Manufacturer:
FUJITSU
Quantity:
12 500
Part Number:
2SK2651-01MR
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V
- Repetitive Avalanche Rated
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
- Absolute Maximum Ratings ( T
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
> Applications
> Maximum Ratings and Characteristics
Thermal Characteristics
GS
= ± 30V Guarantee
on
off
(t
(t
on
on
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
=t
=t
d(off)
d(on)
+t
+t
f
r
)
)
ch
C
=25°C),
150°C)
C
FAP-IIS Series
=25°C),
2SK2651-01MR
unless otherwise specified
unless otherwise specified
Q
R
C
C
C
R
R
V
V
E
P
V
V
V
T
T
Symbol
Symbol
g
Symbol
I
I
I
I
I
t
t
t
t
I
t
DS
D
D(puls)
GS
AR
AS
D
ch
stg
(BR)DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
th(ch-c)
th(ch-a)
I
I
V
V
V
I
I
L = 100µH
channel to case
channel to air
D
D
D
D
DS
GS
GS
=1mA
=1mA
=3A
=3A
I
F
-55 ~ +150
-dI
=2xI
=900V
=0V
=±30V
Rating
F
/dt=100A/µs T
Test conditions
Test conditions
DR
I
F
71,9
=I
900
±30
150
V
R
V
V
V
24
50
DR
V
f=1MHz
CC
GS
GS
6
6
DS
GS
I
GS
D
=600V
=10
=6A
=0V T
V
V
T
T
V
V
V
=25V
=10V
T
=0V
V
ch
ch
ch
GS
DS=
DS
GS
DS
GS
=25°C
=125°C
=25°C
=0V
=0V
=10V
=25V
V
=0V
GS
ch
Unit
ch
mJ
°C
°C
W
V
A
A
V
A
=25°C
=25°C
> Outline Drawing
> Equivalent Circuit
900V
N-channel MOS-FET
Min.
Min.
900
3,5
6
Typ.
Typ.
1,87
900
130
850
4,0
0,2
1,0
8,5
10
10
70
25
80
70
40
4
3,125
Max.
Max.
6A
500
100
62,5 °C/W
4,5
1,0
2,5
°C/W
50W
Unit
Unit
mA
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
Related parts for 2SK2651
2SK2651 Summary of contents
Page 1
... Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 2SK2651-01MR FAP-IIS Series =25°C), unless otherwise specified Symbol Rating V 900 ...
Page 2
... I [A] D Typical Capacitances vs C=f =0V; f=1MHz [V] DS Allowable Power Dissipation vs =f(Tc [°C] c 2SK2651-01MR FAP-IIS Series Drain-Source-On-State Resistance vs =f(Tch): I =3A; V =10V DS(on [°C] ch Typical Forward Transconductance vs =f(I ); 80µs pulse test; V =25V; T =25° ...