2SK3645-01MR Fuji Electric holdings CO.,Ltd, 2SK3645-01MR Datasheet
2SK3645-01MR
Manufacturer Part Number
2SK3645-01MR
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK3645-01MR.pdf
(4 pages)
www.fujielectric.co.jp/denshi/scd
2SK3645-01MR
FUJI POWER MOSFET
Super FAP-G Series
*1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*3 I
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Isolation voltage
Item
F
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
, Tch 150°C
=25°C unless otherwise specified)
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
V
D
D(puls]
AS *2
Symbol
ch
stg
DSX *5
AS *1
D
ISO *6
DS
GS
DS
R
R
= <
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
*3
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*4
*4 V
Absolute maximum ratings
Ratings
DS
-55 to +150
Test Conditions
Test Conditions
I
I
V
V
f=1MHz
V
V
R
V
I
V
L=146 µ H T
I
I
-di/dt=100A/µs
V
V
V
I
I
channel to ambient
< =
channel to case
D
D
D
F
F
D
D
±164
+150
DS
GS
CC
GS
GS
GS
DS
DS
GS
CC
=30A V
=30A V
= 250 µ A
= 250 µ A
=30A
=15A
=15A
100V
100
±41
±30
204.7
=10
70
41
20
53
=100V V
=80V V
=75V
=0V
=48V I
=10V
=10V
=±30V
=50V
5
2.16
2
V
V
GS
GS
*2 Tch 150°C
*5 V
ch
D
GS
DS
V
GS
=0V T
=15A
=0V
=25°C
DS
GS
V
V
=10V
=25V
=0V
DS
GS
=0V
GS
=0V
T
= <
=V
=0V
ch
=-30V *6 t=60sec f=60Hz
N-CHANNEL SILICON POWER MOSFET
ch
=25°C
Unit
GS
kV/µs
kV/µs
W
°C
°C
kVrms
mJ
V
V
A
A
V
A
=25°C
T
T
ch
ch
=125°C
=25°C
TO-220F
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
100
41
3.0
9
1110
Typ.
Typ.
280
10
34
18
22
16
23
31
16
32
13
9
1.10
0.1
0.38
Source(S)
Drain(D)
1665
Max.
(mm)
250
100
420
58.0
Max.
25
44
33
24
35
47
24
48
20
14
2.359
5.0
1.65
Units
Units
200304
°C/W
°C/W
ns
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
1
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2SK3645-01MR Summary of contents
Page 1
... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX *5 ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 120 20V 100 VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 10 1 0.1 0 [A] Maximum Avalanche Energy vs. starting Tch ...
Page 3
... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V 100 80 60 max. 40 typ -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25° Vcc= 50V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...
Page 4
... Maximum Avalanche Current vs Pulse width I =f(t ):starting Tch=25 C,Vcc=48V Single Pulse Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D http://www.fujielectric.co.jp/denshi/scd [sec] ...