GT60J323 TOSHIBA Semiconductor CORPORATION, GT60J323 Datasheet
GT60J323
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GT60J323 Summary of contents
Page 1
... T −55 to 150 °C stg Symbol Max Unit R 0.74 °C/W th (j-c) R 1.56 °C/W th (j-c) Marking 1 GT60J323 JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) TOSHIBA GT60J323 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-01 Unit: mm ...
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... di/dt = −100 A/μ 90 90 (off off 2 GT60J323 Min Typ. Max ― ― ±500 ― ― 1.0 3.0 ― 6.0 ― 1.9 2.5 ― 4800 ― 0.17 ― 0.23 ― 0.16 0.26 (Note 1) ― 0.41 ― 1.4 2.0 ― 0.1 ...
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... Collector-emitter voltage V CE (V) 120 Common emitter 100 Gate-emitter voltage 140 3 GT60J323 I – – − 125° 2006-11-01 ...
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... T j ≤ 125° 1000 Ω 500 300 100 10000 1 (V) Collector-emitter voltage V 4 GT60J323 C – ies C oes C res 1 10 100 1000 (V) CE Switching Time – Collector current I ...
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... 2 Forward current I 200 100 300 500 0 5 GT60J323 r – ( 25°C Diode stage IGBT stage − 3 − 2 − Pulse width t ( – 500 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT60J323 20070701-EN 2006-11-01 ...