S886T Vishay Semiconductors, S886T Datasheet

no-image

S886T

Manufacturer Part Number
S886T
Description
Manufacturer
Vishay Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S886T-GS08
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
S886TR-GS08
Manufacturer:
VISHAY/威世
Quantity:
20 000
MOSMIC for TV–Tuner Prestage with 12 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 12 V supply voltage.
Features
S886T Marking: 982
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
Document Number 85057
Rev. 3, 20-Jan-99
D
D
D
D
amb
amb
2
3
Integrated gate protection diodes
Low noise figure
High gain
Biasing network on chip
Parameter
= 25
= 25
94 9279
_
_
1
C, unless otherwise specified
C, unless otherwise specified
4
Parameter
plated with 35
m
m Cu
Test Conditions
13 579
Test Conditions
T
amb
60 ° C
S886TR Marking: 82R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
D
D
D
Electrostatic sensitive device.
Observe precautions for handling.
4
Improved cross modulation at gain reduction
High AGC-range
SMD package
1
AGC
RF in
94 9278
C block
C block
3
2
3
G1
G2
www.vishay.de FaxBack +1-408-970-5600
Symbol
R
V
Symbol
I
G1/G2SM
G1/G2SM
thChA
V
T
T
P
I
DS
stg
Ch
D
tot
S886T/S886TR
Vishay Telefunken
S
D
–55 to +150
Value
C block
450
Value
RFC
200
150
7.5
16
30
10
95 10831
RF out
94 9296
V
DD
Unit
mW
Unit
K/W
mA
mA
° C
° C
V
V
1 (8)

Related parts for S886T

S886T Summary of contents

Page 1

... Integrated gate protection diodes D Low noise figure D High gain D Biasing network on chip 9279 3 4 S886T Marking: 982 Plastic case (SOT 143 Source Drain Gate Gate 1 Absolute Maximum Ratings unless otherwise specified amb Parameter Drain - source voltage Drain current ...

Page 2

... S886T/S886TR Vishay Telefunken Electrical DC Characteristics = unless otherwise specified T amb Parameter Gate 1 - source mA, V G1S breakdown voltage Gate 2 - source mA, V G2S breakdown voltage Gate 1 - source + G1S leakage current – G1S Gate 2 - source G2S leakage current ...

Page 3

... S886T/S886TR Vishay Telefunken S22 LOG ANG ANG MAG deg dB deg 87.6 –0.35 –1.9 84.8 –0.38 –3.7 81.5 –0.40 –5.5 79.2 –0.43 –7.3 76.3 –0.45 –9.1 74.5 –0.47 –10.5 72.5 –0.51 –12.2 71.2 –0.55 –13.8 69.4 –0.60 –15.3 68.7 – ...

Page 4

... S886T/S886TR Vishay Telefunken Typical Characteristics (T 250 200 150 100 100 T – Ambient Temperature ( 10777 amb Figure 1. Total Power Dissipation vs. Ambient Temperature G2S – Drain Source Voltage ( 10778 DS Figure 2. Drain Current vs. Drain Source Voltage ...

Page 5

... G2S Figure 7. Transducer Gain vs. Gate 2 Source Voltage Document Number 85057 Rev. 3, 20-Jan- =12V 11148 Figure 8. Cross Modulation vs. Gate 2 Source Voltage S886T/S886TR Vishay Telefunken V =12V DS f=800MHz – Gate 2 Source Voltage ( V ) G2S www.vishay.de FaxBack +1-408-970-5600 5 (8) ...

Page 6

... S886T/S886TR Vishay Telefunken G2S j0.5 j0.2 0 0.2 0 –j0.2 1300MHz 800 –j0.5 12 936 –j Figure 9. Input reflection coefficient 550 800 300 50 1050 1300MHz 180 1.0 –150 –120 –90 12 938 Figure 10. Forward transmission coefficient www.vishay.de FaxBack +1-408-970-5600 6 ( ...

Page 7

... Dimensions of S886T in mm Dimensions of S886TR in mm Document Number 85057 Rev. 3, 20-Jan-99 S886T/S886TR Vishay Telefunken 96 12240 96 12239 www.vishay.de FaxBack +1-408-970-5600 7 (8) ...

Page 8

... S886T/S886TR Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Related keywords