SI4982DY Vishay Semiconductors, SI4982DY Datasheet

no-image

SI4982DY

Manufacturer Part Number
SI4982DY
Description
Manufacturer
Vishay Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4982DY
Manufacturer:
MOT
Quantity:
46
Part Number:
SI4982DY-T
Quantity:
336
Part Number:
SI4982DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4982DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4982DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 70748
S-03950—Rev. B, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
100
100
(V)
Ordering Information: Si4982DY
G
G
S
S
1
1
2
2
1
2
3
4
J
J
a
a
0.150 @ V
= 150_C)
= 150_C)
0.180 @ V
a
r
Si4982DY-T1 (with Tape and Reel)
DS(on)
Top View
Dual N-Channel 100-V (D-S) MOSFET
SO-8
Parameter
Parameter
a
a
GS
GS
(W)
= 10 V
= 6 V
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
2.6
2.4
(A)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
G
Symbol
Symbol
T
N-Channel MOSFET
R
J
V
V
I
P
P
, T
DM
I
I
I
thJA
GS
DS
D
D
S
D
D
stg
D
S
- 55 to 150
Vishay Siliconix
Limit
Limit
"20
100
62.5
2.6
2.1
1.7
2.0
1.3
20
Si4982DY
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
2-1

Related parts for SI4982DY

SI4982DY Summary of contents

Page 1

... Top View Ordering Information: Si4982DY Si4982DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4982DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Curren b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 70748 S-03950—Rev. B, 26-May- 1200 Si4982DY Vishay Siliconix Transfer Characteristics 125_C C 4 25_C Gate-to-Source Voltage (V) GS Capacitance 900 ...

Page 4

... Si4982DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.3 0 250 0.3 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...

Related keywords