SUB70N06-14 Vishay Semiconductors, SUB70N06-14 Datasheet
SUB70N06-14
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SUB70N06-14 Summary of contents
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... V (V) r (Ω) (BR)DSS DS(on) 60 0.014 TO-220AB DRAIN connected to TAB Top View SUP70N06-14 Ordering Information: SUB70N06-14 SUB70N06-14-E3 (Lead (Pb)-free) SUP70N06-14-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy Power Dissipation ...
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... SUP/SUB70N06-14 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.0200 °C C 0.0175 25 °C 0.0150 125 °C 0.0125 0.0100 0.0075 0.0050 SUP/SUB70N06-14 Vishay Siliconix 100 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUP/SUB70N06-14 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 1.5 1.0 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS 100 100 T - Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...