SUD50P04-08 Vishay Semiconductors, SUD50P04-08 Datasheet
SUD50P04-08
Available stocks
Related parts for SUD50P04-08
SUD50P04-08 Summary of contents
Page 1
... 0.0117 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy ...
Page 2
... SUD50P04-08 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... GS 0.003 1.5 2.0 2.5 0.030 0.024 0.018 0.012 0.006 °C C 0.000 125 ° SUD50P04-08 Vishay Siliconix Drain Current (A) D On-Resistance vs. Drain Current T = 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs ...
Page 4
... SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 8000 6000 C iss 4000 2000 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs ...
Page 5
... S10-0034-Rev. A, 11-Jan-10 1000 100 10 1 0 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD50P04-08 Vishay Siliconix Limited DS(on) 100 µ ms, 100 °C C Single Pulse BVDSS Limited Drain-to-Source Voltage (V) ...
Page 6
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...