TPC8107 TOSHIBA Semiconductor CORPORATION, TPC8107 Datasheet

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TPC8107

Manufacturer Part Number
TPC8107
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
(Note 2a) (Note 4)
GS
DC
Pulse (Note 1)
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
= −0.8 to −2.0 V (V
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 3)
= −10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
| = 31 S (typ.)
AS
AR
stg
D
ch
D
D
TPC8107
= 5.5 mΩ (typ.)
DS
DS
= −10 V, I
= −30 V)
−55 to 150
Rating
0.19
−30
−30
±20
−13
−52
219
−13
150
1.9
1.0
1
D
= −1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1B
6
3
2006-11-16
TPC8107
5
4
Unit: mm

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TPC8107 Summary of contents

Page 1

... DGR ± GSS − − 219 mJ AS − 0. 150 °C ch −55 to 150 T °C stg 1 TPC8107 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2006-11-16 ...

Page 2

... Year of manufacture (The last digit of a year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm Ω TPC8107 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) = −13 A 2006-11-16 ...

Page 3

... − gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPC8107 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ − −30 ⎯ ⎯ −15 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 4

... Drain-source voltage V −0.5 −0.4 −0.3 −0.2 −0.1 0 −5 −4 0 Gate-source voltage V 100 0.3 −100 −0.1 −0.3 4 TPC8107 I – Common source Ta = 25°C −2.8 Pulse test −2.6 −2.4 −2 −2 V −2 −3 −4 −5 ( – Common source Ta = 25° ...

Page 5

... C oss −1.2 C rss −0.8 −0.4 −30 −100 0 −80 −40 Dynamic input/output characteristics − − −20 −12 −10 −6 0 200 0 5 TPC8107 I – −5 −3 − Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1.0 1.2 Drain-source voltage V ( – Ta ...

Page 6

... Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max −0.01 −0.01 −0.1 −1 −10 Drain-source voltage V (V) DS − 0 Pulse width t ( ms* −100 6 TPC8107 (2) (1) Single pulse 100 1000 2006-11-16 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8107 20070701-EN 2006-11-16 ...

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