MRF187S Motorola, MRF187S Datasheet

no-image

MRF187S

Manufacturer Part Number
MRF187S
Description
Manufacturer
Motorola
Datasheets
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large–signal, common source amplifier
applications in 26 volt base station equipment.
• Guaranteed Performance @ 880 MHz, 26 Volts
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
REV 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Drain–Gate Voltage (R
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
@ 26 Vdc, 880 MHz, 85 Watts CW
Reel.
Derate above 25°C
Intermodulation Distortion — –28 dBc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 85 Watts PEP
Power Gain — 12 dB
Efficiency — 30%
GS
= 1 MΩ)
C
≥ 25°C
Characteristic
Rating
Symbol
Symbol
V
V
R
V
T
P
DSS
DGR
T
I
θJC
stg
GS
D
D
J
MRF187 MRF187R3 MRF187SR3
MRF187SR3
MRF187R3
LATERAL N–CHANNEL
CASE 465A–06, STYLE 1
RF POWER MOSFETs
CASE 465–06, STYLE 1
1.0 GHz, 85 W, 26 V
MRF187
–65 to +200
BROADBAND
MRF187SR3
Value
1.43
Max
0.70
NI–780S
±20
250
200
MRF187
65
65
15
NI–780
Order this document
by MRF187/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
1

Related parts for MRF187S

Related keywords