MRF19085 Motorola, MRF19085 Datasheet

MRF19085

Manufacturer Part Number

MRF19085

Description

Manufacturer

Motorola

Datasheets

1.MRF19085.pdf (12 pages)

2.MRF19085.pdf (12 pages)

3.MRF19085.pdf (12 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF19085

Manufacturer:

FREESCALE

Quantity:

490

Company:

BOSTOCK HK LIMITED

Part Number:

MRF19085

Manufacturer:

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF19085LR3

Manufacturer:

FREESCALE

Quantity:

20 000

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier

applications.

• Typical 2–Carrier N–CDMA Performance for V

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ESD PROTECTION CHARACTERISTICS

REV 5

Motorola, Inc. 2003

MOTOROLA RF DEVICE DATA

Drain–Source Voltage

Gate–Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Human Body Model

Machine Model

Thermal Resistance, Junction to Case

Designed for PCN and PCS base station applications with frequencies from

IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 –885 Khz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power

Reel.

Derate above 25°C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 18 Watts Avg.

Power Gain — 13.0 dB

Efficiency — 23%

ACPR — –51 dB

IM3 — –36.5 dBc

µ″ Nominal.

= 850 mA, P

out

= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz

= 25°C

Test Conditions

Characteristic

Rating

= 26 Volts,

MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3

Symbol

DSS

θJC

stg

CASE 465–06, STYLE 1

MRF19085SR3, MRF19085LSR3

MRF19085LSR3

MRF19085SR3

MRF19085R3

CASE 465A–06, STYLE 1

LATERAL N–CHANNEL

MRF19085

RF POWER MOSFETs

MRF19085

1990 MHz, 90 W, 26 V

NI–780

M3 (Minimum)

1 (Minimum)

–65 to +150

NI–780S

–0.5, +15

Value

Class

1.56

Max

0.79

273

200

Order this document

by MRF19085/D

Watts

W/°C

°C/W

Unit

Vdc

°C

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