MRF5015 Motorola, MRF5015 Datasheet

MRF5015

Manufacturer Part Number

MRF5015

Description

Manufacturer

Motorola

Datasheets

1.MRF5015.pdf (8 pages)

2.MRF5015.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF5015

Manufacturer:

MOTOROLA/摩托罗拉

Quantity:

20 000

Current page: 1 of 8
Download datasheet (158Kb)

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistor

N–Channel Enhancement–Mode

cies to 520 MHz. The high gain and broadband performance of this device

makes it ideal for large–signal, common source amplifier applications in 12.5

volt mobile, and base station FM equipment.

REV 6

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

MOTOROLA RF DEVICE DATA

Drain–Source Voltage

Drain–Gate Voltage (RGS = 1 M )

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T C = 25 C

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Drain–Source Breakdown Voltage (V GS = 0, I D = 5 mAdc)

Zero Gate Voltage Drain Current (V DS = 15 Vdc, V GS = 0)

Gate–Source Leakage Current (V GS = 20 Vdc, V DS = 0)

Designed for broadband commercial and industrial applications at frequen-

Motorola, Inc. 1994

Guaranteed Performance at 512 MHz, 12.5 Volts

Characterized with Series Equivalent Large–Signal Impedance Parameters

S–Parameter Characterization at High Bias Levels

Excellent Thermal Stability

All Gold Metal for Ultra Reliability

Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive

Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

Derate above 25 C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 15 Watts

Power Gain — 10 dB Min

Efficiency — 50% Min

Characteristic

Rating

(T C = 25 C unless otherwise noted.)

V (BR)DSS

Symbol

I DSS

I GSS

Symbol

V DGR

V DSS

R JC

V GS

T stg

Min

P D

T J

I D

—

N–CHANNEL BROADBAND

15 W, 512 MHz, 12.5 VOLTS

Typ

CASE 319–07, STYLE 3

—

MRF5015

– 65 to +150

RF POWER FET

Value

0.29

Max

200

3.5

Max

Order this document

—

by MRF5015/D

MRF5015

(continued)

mAdc

Watts

W/ C

Unit

Vdc

Adc

Vdc

C/W

Adc

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