GM71V64400CT-5 Hynix Semiconductor, GM71V64400CT-5 Datasheet

GM71V64400CT-5

Manufacturer Part Number

GM71V64400CT-5

Description

Manufacturer

Hynix Semiconductor

Datasheet

1.GM71V64400CT-5.pdf (9 pages)

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Features

Description

Rev 0.1 / Apr’01

• Low Power

- Active : 432 mW / 396 mW / 360 mW (MAX)

• RAS Only Refresh, CAS before RAS Refresh,

• LVTTL

• 8192 Refresh Cycles/64 ms

• Single Power Supply of 3.3V¡ ¾ 0 .3V

dynamic RAM organized 16,777,216 words by 4

bits. The GM71V64400C utilizes 0.35um

CMOS Silicon Gate Process Technology as well

as advanced circuit techniques for wide

operating margins, both internally and to the

system user. System oriented features include

single power supply of 3.3V¡ ¾ 0 .3V tolerance,

d i r e c t i n t e r f a c i n g c a p a b i l i t y w i t h h i g h

performance logic families such as Schottky

TTL.

a high speed access mode.

• 16,777,216 Words x 4 Bit

• Fast Page Mode Capability

• Fast Access Time & Cycle Time

with a built-in VBB generator

Hidden Refresh Capability

The GM71V64400C is the second generation

The GM71V64400C offers Fast Page Mode as

GM71V64400C-6

- Standby : 3.6 mW ( CMOS level :MAX )

GM71V64400C-5

GM71V64400C-7

* This Data Sheet is subject to change without notice.

RAC

CAC

110

130

(Unit: ns)

RAS

I/O0

I/O1

Pin Configuration

32 SOJ / TSOP II

GM71V64400C

16,777,216 WORDS x 4 BIT

CMOS DYNAMIC RAM

(Top View)

I/O3

I/O2

CAS

A12

A11

A10

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