APT50GP60LDLG Microsemi Corporation, APT50GP60LDLG Datasheet - Page 8

• Manufacturer Part Number: APT50GP60LDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-264; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 50
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
FIGURE 6, Dynamic Parameters vs Junction Temperature
8000
7000
6000
5000
4000
3000
2000
1000
120
100
1.2
0.8
0.6
0.4
0.2
500
450
400
350
300
250
200
150
100
1.0
FIGURE 8, Junction Capacitance vs. Reverse Voltage
80
60
40
20
50
0
0
0
0
FIGURE 2, Forward Current vs. Forward Voltage
0
0
0
0
-di
T
V
V
J
F
R
F
/dt, CURRENT RATE OF CHANGE (A/μs)
= 125°C
T
T
= 400V
, ANODE-TO-CATHODE VOLTAGE (V)
T
J
J
0.5
, JUNCTION TEMPERATURE (°C)
= 25°C
Q
J
I
25
t
RRM
= 125°C
T
RR
200
RR
J
V
= 55°C
R
, REVERSE VOLTAGE (V)
1.0
50
10
400
75
1.5
600
100
2.0
T
J
= 150°C
100
800
125
100A
2.5
25A
50A
1000
400
150
3.0
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
700
600
500
400
300
200
100
45
40
35
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0
0
-di
0
25
0
-di
F
T
V
F
/dt, CURRENT RATE OF CHANGE (A/μs)
J
Duty cycle = 0.5
R
/dt, CURRENT RATE OF CHANGE (A/μs)
= 125°C
= 400V
T
25A
J
= 126°C
50
200
200
50A
100A
Case Temperature (°C)
75
400
400
100
100A
600
600
125
APT50GP60LDL(G)
50A
800
800
T
V
150
J
R
= 125°C
= 400V
25A
1000
175
1000