APT50GP60LDLG Microsemi Corporation, APT50GP60LDLG Datasheet - Page 9

• Manufacturer Part Number: APT50GP60LDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-264; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 50
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
6
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
di
F
RRM
M
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
/dt - Maximum Rate of Current Increase During the Trailing Portion of t rr.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
Figure 10, Diode Reverse Recovery Waveform and Definitions
RRM
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Dimensions in Millimeters and (Inches)
and t rr .
TO-264 (L) Package Outline
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
di
F
/dt Adjust
Figure 9. Diode Test Circuit
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
2.79 (.110)
3.18 (.125)
2-Plcs.
Zero
19.51 (.768)
20.50 (.807)
V r
1
TRANSFORMER
CURRENT
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter
2
D.U.T.
(Anode)
(Cathode)
3
4
5
APT50GP60LDL(G)
t rr / Q rr
Waveform
0.25 I RRM
Slope = di
6
M
/ dt