NL17SZ17DFT2G ON Semiconductor, NL17SZ17DFT2G Datasheet - Page 3

• Manufacturer Part Number: NL17SZ17DFT2G
• Description: IC BUFF SCHMT TRG N-INV SOT353
• Manufacturer: ON Semiconductor
• Series: 17SZr

Specifications of NL17SZ17DFT2G

• Logic Type: Schmitt Trigger - Buffer, Driver
• Number Of Elements: 1
• Number Of Bits Per Element: 1
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Logic Family: NL17SZ
• Number Of Channels Per Chip: Single
• Polarity: Non-Inverting
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.65 V
• Maximum Operating Temperature: 85 C
• Mounting Style: SMD/SMT
• High Level Output Current: - 32 mA
• Input Bias Current (max): 1 uA
• Low Level Output Current: 32 mA
• Maximum Power Dissipation: 186 mW
• Minimum Operating Temperature: - 40 C
• Propagation Delay Time: 7.2 ns @ 3.3 V or 5.9 ns @ 5 V
• Number Of Lines (input / Output): 1 / 1
• Logic Device Type: Buffer, Schmitt Trigger
• Supply Voltage Range: 1.65V To 5.5V
• Logic Case Style: SOT-353
• No. Of Pins: 5
• Operating Temperature Range: -40°C To +85°C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Family Type: 17SZ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NL17SZ17DFT2GOS; NL17SZ17DFT2GOS; NL17SZ17DFT2GOSTR

8. C
CAPACITIVE CHARACTERISTICS
DC ELECTRICAL CHARACTERISTICS
Symbol
AC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
V
V
V
I
V
t
t
C
OFF
I
Average operating current can be obtained by the equation: I
power consumption; P
V
C
I
CC
PLH
PHL
T
T
OH
IN
OL
PD
PD
)
*
H
IN
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Positive Input
Threshold Voltage
Negative Input
Threshold Voltage
Input Hysteresis Voltage
High−Level Output Voltage
V
Low−Level Output Voltage
V
Input Leakage Current
Power Off−Output
Leakage Current
Quiescent Supply Current
Propagation Delay
Input A to Y
(Figures 3 and 4)
Input Capacitance
Power Dissipation Capacitance
(Note 8)
IN
IN
= V
= V
IH
IH
Parameter
Parameter
or V
or V
IL
IL
D
= C
PD
Parameter
 V
CC
2
I
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
R
R
OH
OH
OH
OH
OH
OH
OH
OL
OL
OL
OL
OL
OL
OL
 f
IN
OUT
IN
L
L
= 1 MW, C
= 500 W, C
in
= 100 mA
= 4 mA
= 8 mA
= 12 mA
= 16 mA
= 24 mA
= 32 mA
= 5.5 V or GND
= −100 mA
= −3 mA
= *8 mA
= *12 mA
= *16 mA
= *24 mA
= *32 mA
= V
+ I
= 5.5 V
(Input t
Condition
Condition
CC
CC
or GND
 V
r
L
L
CC
= t
= 15 pF
= 50 pF
.
f
http://onsemi.com
= 3.0 ns)
CC(OPR
V
10 MHz, V
10 MHz, V
2.5 $ 0.2
3.3 $ 0.3
5.0 $ 0.5
3.3 $ 0.3
5.0 $ 0.5
1.65 to 5.5
1.65 to 5.5
CC
3
0 to 5.5
)
V
1.65
1.65
1.65
1.65
1.65
1.65
1.8
= C
V
(V)
= 5.5 V, V
(V)
2.3
2.7
3.0
4.5
5.5
2.3
2.7
3.0
4.5
5.5
2.3
2.7
3.0
4.5
5.5
2.3
2.7
3.0
3.0
4.5
2.3
2.7
3.0
3.0
4.5
5.5
CC
CC
0
PD
CC
CC
 V
CC
= 3.3 V, V
= 5.5 V, V
V
I
Min
2.0
2.0
1.0
1.0
0.5
1.5
0.8
= 0 V or V
CC
 f
0.25
1.29
Min
0.6
1.0
1.2
1.3
1.9
2.2
0.2
0.4
0.5
0.6
1.0
1.2
0.1
0.3
0.4
0.6
0.7
1.9
2.2
2.4
2.3
3.8
in
*0.1
Condition
+ I
T
T
A
A
CC
I
I
= 255C
Typ
9.1
7.6
5.0
3.7
3.1
4.4
3.7
= 0 V or V
= 0 V or V
= 255C
CC
. C
0.75
0.87
0.48
0.75
0.83
0.93
1.52
0.08
0.22
0.28
0.38
0.42
Typ
V
1.0
1.5
1.7
1.9
2.7
3.3
0.5
1.0
1.5
1.9
1.2
1.4
2.1
2.4
2.7
2.5
4.0
0.2
CC
PD
is used to determine the no−load dynamic
Max
12.5
9.0
6.3
5.2
7.2
5.9
$0.1
15
Max
1.15
1.15
0.24
0.55
0.55
CC
CC
1.4
1.8
2.0
2.2
3.1
3.6
0.8
1.4
1.5
2.0
2.3
0.9
1.1
1.2
1.5
1.7
0.1
0.3
0.4
0.4
1.0
1.0
−555C v T
−555C v T
V
Min
CC
2.0
2.0
1.0
1.0
0.5
1.5
0.8
0.25
Min
1.29
0.6
1.0
1.2
1.3
1.9
2.2
0.2
0.4
0.5
0.6
1.0
1.2
0.1
0.3
0.4
0.6
0.7
1.9
2.2
2.4
2.3
3.8
*0.1
A
A
v 1255C
v 1255C
Typical
u2.5
Max
15.6
9.5
6.5
5.5
7.5
6.2
13
11
$1.0
9
Max
1.15
1.15
0.24
0.55
0.55
1.4
1.8
2.0
2.2
3.1
3.6
0.8
1.4
1.5
2.0
2.3
0.9
1.1
1.2
1.5
1.7
0.1
0.3
0.4
0.4
10
10
Unit
Unit
Unit
pF
pF
mA
mA
mA
ns
V
V
V
V
V