IXFH 23N60Q IXYS Corporation, IXFH 23N60Q Datasheet - Page 4

• Manufacturer Part Number: IXFH 23N60Q
• Description: TRANS MOSFET N-CH 600V 23A 3TO-247 AD
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
60
50
40
30
20
1 00
1 0
40
35
30
25
20
0
1 5
1 0
5
0
0.3
3.5
Fig. 9. Source Current vs. Source-To-Drain
0
f = 1 M Hz
Fig. 7. Input Admittance
5
4
Fig. 11. Capacitance
0.5
T
1 0
T
4.5
J
J
= 1 25ºC
= -40ºC
1 25ºC
V
25ºC
V
1 5
V
SD
GS
C
C
C
DS
5
Voltage
iss
oss
rss
- Volts
0.7
- Volts
20
- Volts
5.5
25
6
0.9
T
30
J
= 25ºC
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6.5
35
1 .1
40
7
42
36
30
24
1 8
1 2
0.01
6
0
1 0
0.1
8
6
4
2
0
1
0
0
T
Fig. 12. Maxim um T ransient T herm al
1
J
= -40ºC
1 25ºC
V
I
I
D
G
Fig. 8. Transconductance
25ºC
DS
= 1 1 .5A
= 1 0mA
1 0
= 300V
20
Puls e Width - millis ec onds
Fig. 10. Gate Charge
Q
20
G
I
10
D
- nanoCoulombs
Resistance
- Amperes
40
30
IXFH 23N60Q
IXFT 23N60Q
60
40
100
80
50
6,534,343
1000
60
1 00