IXTA110N055PSN IXYS Corporation, IXTA110N055PSN Datasheet
IXTA110N055PSN
Manufacturer Part Number
IXTA110N055PSN
Description
Transistor Mosfet N-CH 55V 110A 3TO-263
Manufacturer
IXYS Corporation
Datasheet
1.IXTA110N055PSN.pdf
(5 pages)
© 2004 IXYS All rights reserved
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
DRMS
DM
AR
GSS
DSS
J
stg
L
DGR
GSM
AR
D
JM
GS(th)
DSS
AS
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-3P
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250µA
, V
= 0.5 I
G
= 10 Ω
DS
= 0
D25
(TO-3P / TO-220)
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
Advanced Technical Information
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
JM
,
Min. Typ.
2.5
55
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
11
±20
110
250
110
360
175
300
260
1.0
5.5
55
55
75
30
10
4
3
±100
13.5
250
Max.
5.0
25
V/ns
mΩ
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
g
J
Advantages
TO-3P (IXTQ)
TO-220 (IXTP)
TO-263 (IXTA)
G = Gate
S = Source
Features
PolarHT
utilize proprietary designs and
process. US patent is pending.
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G
DSS
DS(on)
D
G
S
TM
D
G
DMOS transistors
=
= 110
= 13.5 mΩ Ω Ω Ω Ω
S
D = Drain
TAB = Drain
S
55
(TAB)
DS99182(05/04)
(TAB)
(TAB)
V
A
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IXTA110N055PSN Summary of contents
Page 1
PolarHT TM Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions 25°C to 175°C DSS 25°C to 175°C; R DGR J V GSM 25°C D25 C I External lead current limit ...
Page 2
... F -di/dt = 100 A/µ TO-263 (IXTA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 23 ...
Page 3
Fig. 1. Output Characteristics @ 25 110 V = 10V GS 100 0.2 0.4 0.6 0 Volts D S Fig. 3. Output Characteristics @ 150 110 V ...
Page 4
... Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: º º º 150 ...
Page 5
...