IXTA110N055PSN IXYS Corporation, IXTA110N055PSN Datasheet - Page 2

• Manufacturer Part Number: IXTA110N055PSN
• Description: Transistor Mosfet N-CH 55V 110A 3TO-263
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
d(on)
d(off)
f
S
SM
r
rr
fs
SD
iss
oss
rss
g(on)
gs
gd
thJC
thCK
RM
TO-263 (IXTA) Outline
Test Conditions
V
V
V
R
V
(TO-3P)
(TO-220)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/µs
V
F
F
DS
GS
GS
G
GS
GS
R
= I
= 25 A
= 25 V
= 10 V; I
= 10 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
, pulse test
DSS
DSS
4,850,072
4,835,592
, I
, I
D
D
= 0.5 I
= I
(T
Dim.
(T
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
D25
J
4,931,844
4,881,106
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D25
14.61
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
5,034,796
5,017,508
10.29
15.88
Max.
Min.
Min.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
23
Characteristic Values
Characteristic Values
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
2210
1400
Inches
5,049,961
Typ.
0.21
0.25
0
5,063,307
550
typ.
120
1.4
36
27
53
66
45
76
17
33
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029
Max.
Max.
IXTA 110N055P IXTP 110N055P
0.42 K/W
5,237,481
5,187,117
110
250
1.5
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
5,381,025
5,486,715
TO-220 (IXTP) Outline
TO-3P (IXTQ) Outline
6,306,728B1
6,404,065B1
Pins: 1 - Gate
IXTQ 110N055P
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
2 - Drain
6,583,505