IXTA75N10PSN IXYS Corporation, IXTA75N10PSN Datasheet - Page 2

• Manufacturer Part Number: IXTA75N10PSN
• Description: Transistor Mosfet N-CH 100V 75A 3TO-263
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
d(on)
d(off)
f
S
SM
r
rr
fs
SD
iss
oss
rss
g(on)
gs
gd
thJC
thCK
RM
TO-263 (IXTP) Outline
Test Conditions
V
V
V
R
V
(TO-3P)
(TO-220)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/µs
V
F
F
DS
GS
GS
G
GS
GS
R
= I
= 25 A
= 75 V
= 10 V; I
= 10 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
, pulse test
DSS
DSS
4,850,072
4,835,592
, I
, I
D
D
= 0.5 I
= I
(T
Dim.
(T
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
D25
J
4,931,844
4,881,106
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D25
14.61
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
5,034,796
5,017,508
10.29
15.88
Max.
Min.
Min.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
20
Characteristic Values
Characteristic Values
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
2250
Inches
5,049,961
Typ.
0.21
0.25
0
5,063,307
890
275
typ.
120
1.4
28
27
53
66
45
74
18
40
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029
Max.
Max.
0.42 K/W
5,237,481
5,187,117
200
1.5
75
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
IXTA 75N10P IXTP 75N10P
5,381,025
5,486,715
TO-220 (IXTA) Outline
TO-3P (IXTQ) Outline
6,306,728B1
6,404,065B1
Pins: 1 - Gate
6,162,665
6,259,123B1 6,306,728B1 6,683,344
IXTQ 75N10P
6,534,343
2 - Drain
6,583,505