IXTA75N10PSN IXYS Corporation, IXTA75N10PSN Datasheet - Page 4

• Manufacturer Part Number: IXTA75N10PSN
• Description: Transistor Mosfet N-CH 100V 75A 3TO-263
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
120
105
200
180
160
140
120
100
100
90
75
60
45
30
15
80
60
40
20
0
0
0.5
5
0
T
f = 1MHz
J
5
0.7
= 125ºC
6
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
0.9
7
V
V
15
V
G S
S D
D S
T
J
T
- Volts
- Volts
1.1
= 25ºC
20
J
- Volts
8
= 125ºC
-40ºC
4,850,072
4,835,592
25ºC
25
1.3
9
30
4,931,844
4,881,106
C oss
C rss
C iss
1.5
1 0
35
5,034,796
5,017,508
1.7
40
1 1
5,049,961
5,063,307
1000
100
10
40
36
32
28
24
20
16
12
10
1
8
4
0
9
8
7
6
5
4
3
2
1
0
5,237,481
5,187,117
1
0
0
R
V
I
I
D
G
DS(on)
20
DS
10
IXTA 75N10P IXTP 75N10P
= 37.5A
= 10mA
5,381,025
Fig. 8. Transconductance
5,486,715
= 50V
40
Limit
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
20
Safe Operating Area
Q
10
60
6,306,728B1
6,404,065B1
G
I
30
DC
- nanoCoulombs
V
D
D S
- Amperes
80
40
- Volts
100
6,162,665
6,259,123B1 6,306,728B1 6,683,344
IXTQ 75N10P
50
120
100
T
100µs
1ms
25µs
10ms
J
6,534,343
60
T
T
140
= -40ºC
J
C
125ºC
= 150ºC
25ºC
= 25ºC
70
160
6,583,505
1000
180
80