IXTH100N25P IXYS Corporation, IXTH100N25P Datasheet
IXTH100N25P
Related parts for IXTH100N25P
IXTH100N25P Summary of contents
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PolarHT TM Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V GSM 25°C D25 C I External lead current limit ...
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... F -di/dt = 100 A/µ 100 TO-264 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 40 56 ...
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Fig. 1. Output Characteristics @ 25 100 V = 10V 0 Volts DS Fig. 3. Output Characteristics @ 125 ...
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Fig. 7. Input Adm ittance 150 125 100 125ºC J 25ºC -40º 4 Volts GS Fig. 9. Source Current vs. Source-To-Drain Voltage 300 250 200 150 100 T ...
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IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXTQ 100N25P IXTT 100N25P IXTK 100N25P 100 1000 ...