FCB11N60F Fairchild Semiconductor, FCB11N60F Datasheet - Page 4

• Manufacturer Part Number: FCB11N60F
• Description: Fcb11n60f 600v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

FCB11N60F Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
Operation in This Area
is Limited by R
* Notes :
1. T
2. T
3. Single Pulse
vs. Temperature
C
J
= 150
= 25
o
C
-50
o
C
DS(on)
V
DS
T
J
10
, Drain-Source Voltage [V]
, Junction Temperature [
1
0
1 0
1 0
1 0
-1
-2
0
1 0
D = 0 .5
-5
Figure 11. Transient Thermal Response Curve
50
0 .0 5
0 .0 2
0 .2
0 .1
0 .0 1
DC
1 0
10
s in g le p u ls e
100
10 ms
2
-4
o
C]
1 ms
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Notes :
1. V
2. I
100 us
D
GS
= 250
150
= 0 V
1 0
μ
A
-3
10
(Continued)
200
3
1 0
4
-2
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
12.5
10.0
* N o te s :
7.5
5.0
2.5
0.0
P
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
25
-100
-1
θ
J M
JC
(t) = 1 .0
- T
vs. Temperature
C
vs. Case Temperature
t
1
= P
t
2
-50
D M
o
C /W M a x .
50
1 0
* Z
0
1
θ
/t
J C
2
(t)
T
T
J
, Junction Temperature [
C
, Case Temperature [
0
75
1 0
1
50
100
100
o
C]
o
C]
125
* Notes :
1. V
2. I
150
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D
GS
= 5.5 A
= 10 V
150
200