1N5614

Manufacturer Part Number1N5614
DescriptionGlass Passivated Junction Silicon Rectifiers
ManufacturerEIC Semiconductor Incorporated
1N5614 datasheet
 


Page 1/1

Download datasheet (121Kb)Embed
1N5614 - 1N5622
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High forward surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 50 μA
Maximum Average Forward Current at Ta = 55 °C
Peak Forward Surge Current
(Ta = 100 °C,f = 60 Hz, I
= 750 mA for ten 8.3 ms
F(AV)
surges @ 1 minute intervals)
Minimum Forward Voltage at I
= 3.0 A
F
Maximum Forward Voltage at I
= 3.0A
F
Maximum Reverse Current
at V
at V
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance , Junction to Lead (Note 2)
Operating Junction and Storage Temperature Range
Notes :
(1) Reverse Recovery Test Conditions : I
(2) At 3/8"(10 mm) lead length form body.
Page 1 of 1
GLASS PASSIVATED JUNCTION
SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNIT
V
RWM
V
BR(MIN)
I
F(AV)
at Ta = 100 °C
I
FSM
V
F(MIN)
V
F(MAX)
, Ta = 25 °C
I
RWM
R
, Ta = 100 °C
I
RWM
R(H)
Trr
R
ӨJL
T
, T
J
STG
= 0.5 A, I
= 1.0 A, I
= 0.25 A.
F
RM
R(REC)
Certificate TH97/10561QM
SILICON RECTIFIERS
DO - 41
1.00 (25.4)
0.107 (2.7)
MIN.
0.080 (2.0)
0.205 (5.2)
0.161 (4.1)
1.00 (25.4)
0.034 (0.86)
MIN.
0.028 (0.71)
Dimensions in inches and ( millimeters )
200
400
600
800
220
440
660
880
1.0
0.75
30
0.8
1.3
0.5
25
2.0
38
-65 to +175
Rev. 02 : July 24, 2006
Certificate TW00/17276EM
1000
V
1100
V
A
A
V
V
μA
μs
°C/W
°C