BAR64V-05W Vishay, BAR64V-05W Datasheet

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BAR64V-05W

Manufacturer Part Number
BAR64V-05W
Description
Rf Pin Diodes
Manufacturer
Vishay
Datasheet
RF PIN Diodes - Dual, Common Cathode in SOT-323
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-05W was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
Features
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile, wireless and TV-Applications
Parts Table
Absolute Maximum Ratings
T
Document Number 85647
Rev. 1.2, 15-Apr-05
• High reverse Voltage
• Small reverse capacitance
• High breakdown voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
BAR64V-05W
Reverse voltage
Forward current
Junction temperature
Storage temperature range
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Part
Parameter
BAR64V-05W-GS18 or BAR64V-05W-GS08
Test condition
Ordering code
e3
Mechanical Data
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Symbol
T
V
3
I
T
stg
F
R
j
DW5
2
Marking
1
- 55 to + 150
Vishay Semiconductors
Value
100
100
150
BAR64V-05W
1
3
Tape and Reel
2
Remarks
www.vishay.com
18380
Unit
mA
°C
°C
V
1

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BAR64V-05W Summary of contents

Page 1

... RF PIN Diodes - Dual, Common Cathode in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W was designed for RF signal switching and tuning function of the forward bias current the forward resistance (rf) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz GHz ...

Page 2

... BAR64V-05W Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter = 10 µA Reverse voltage I R Reverse current Forward voltage Diode capacitance MHz MHz MHz, V Forward resistance f = 100 MHz 100 MHz 100 MHz, I ...

Page 3

... Recovery Time ( ns ) 18338 Figure 5. Typical Charge Recovery Curve Package Dimensions in mm (Inches) 0.10 (0.004) 10 2.05 (0.080) 0.30 (0.012) 1.3 (0.051) Document Number 85647 Rev. 1.2, 15-Apr-05 3500 0.10 (0.004) 1.00 (0.039) Mounting Pad Layout 2.0 (0.079) 0.95 (0.37) BAR64V-05W Vishay Semiconductors SO Method E 0.39 (0.015) 0.9 (0.035) 0.95 (0.037) 96 12236 www.vishay.com 3 ...

Page 4

... BAR64V-05W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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