BAR64V-05W-V Vishay, BAR64V-05W-V Datasheet

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BAR64V-05W-V

Manufacturer Part Number
BAR64V-05W-V
Description
Rf Pin Diodes - Dual, Common Cathode In Sot323
Manufacturer
Vishay
Datasheet
RF PIN Diodes - Dual, Common Cathode in SOT323
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-05W-V was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (RF) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for these PIN Diodes
are switches and attenuators in wireless, mobile and
TV-systems.
Features
Applications
Parts Table
Absolute Maximum Ratings
T
Document Number 81836
Rev. 1.1, 25-Feb-08
• High voltage current controlled RF resistor
• Small diode capacitance
• Low series inductance
• Low forward resistance
• Improved performance due to two seperated dice
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
• For frequencies up to 3 GHz
• RF-signal tuning
• Signal attenuator and switches
• Mobile, wireless and TV-Applications
BAR64V-05W-V
Reverse voltage
Forward current
Junction temperature
Storage temperature range
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Part
Parameter
BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08
For technical support, please contact: Diodes-SSP@vishay.com
Test condition
Ordering code
e3
Mechanical Data
Case: SOT323 plastic case
Weight: approx. 6.0 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Symbol
T
3
V
T
I
stg
F
R
j
2
Marking
DW5
BAR64V-05W-V
1
- 55 to + 150
Vishay Semiconductors
Value
100
100
150
1
3
Tape and reel
Remarks
www.vishay.com
2
Unit
mA
°C
°C
V
18380
1

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BAR64V-05W-V Summary of contents

Page 1

... RF PIN Diodes - Dual, Common Cathode in SOT323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning function of the forward bias current the forward resistance (RF) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz GHz ...

Page 2

... BAR64V-05W-V Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Reverse voltage Reverse current Forward voltage MHz MHz, V Diode capacitance MHz 100 MHz 100 MHz, I Forward resistance f = 100 MHz mA, I Charge carrier life time ...

Page 3

... GHz f = 0.9 GHz Forward Current (mA) 21029 F Figure 7. Second Order Intercept Point for One Diode Inserted in 50 Ω Strip Line Document Number 81836 For technical support, please contact: Diodes-SSP@vishay.com Rev. 1.1, 25-Feb- 100 mA F 2.5 3 3.5 2.5 3 3.5 10 BAR64V-05W-V Vishay Semiconductors www.vishay.com 3 ...

Page 4

... BAR64V-05W-V Vishay Semiconductors Package Dimensions in mm (inches) 2.2 [0.087] 2.0 [0.079] 0.4 [0.016] 0.2 [0.008] 0.65 [0.026] typ. 1.4 [0.055] 1.2 [0.047] Created - Date: 21 February 2008 Document no.: 6.541-5040.02-4 21113 www.vishay.com For technical support, please contact: Diodes-SSP@vishay.com 4 : SOT323-V 0.46 [0.018] 0.26 [0.010] 0.525 [0.021] ref. foot print recommendation: 0.65 [0.026] 1.3 [0.051] 2.45 [0.096] 2 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81836 For technical support, please contact: Diodes-SSP@vishay.com Rev. 1.1, 25-Feb-08 and may do so without further notice. BAR64V-05W-V Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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