DF2S6.8UFS TOSHIBA Semiconductor CORPORATION, DF2S6.8UFS Datasheet
DF2S6.8UFS
Manufacturer Part Number
DF2S6.8UFS
Description
Toshiba Diodes For Protecting Against Esd
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.DF2S6.8UFS.pdf
(4 pages)
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Price
Part Number:
DF2S6.8UFS
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
DF2S6.8UFS(TPL3)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
DF2S6.8UFS,L3F
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Product for Use Only as Protection against Electrostatic Discharge (ESD).
Abusolute Maximum Ratings
Pad Dimension (Reference)
Electrical Characteristics
*This product is for protection against electrostatic discharge (ESD) only
2terminal ultra small package suitable for mounting on small space.
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Note: Using continuously under heavy loads (e.g. the application of high
Reverse stand-off voltage
Reverse voltage
Reverse current
Total capacitance
(between Cathode and Anode)
Forward stand-off voltage
Power dissipation
Junction temperature
Storage temperature range
pad dimension of 4 mm × 4 mm.
0.26
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
0.21
Characteristic
Characteristic
0.85
TOSHIBA Diodes for Protecting against ESD
(Ta = 25°C)
Symbol
Symbol
(Ta = 25°C)
Unit: mm
V
DF2S6.8UFS
T
RWM
V
C
V
I
T
P
stg
R
R
F
T
j
―
I
V
V
I
R
F
RWM
R
= 1ｍA
= 1mA
−55 to 150
= 0 V, f = 1 MHz
Rating
150*
150
= 5 V
1
Test Condition
Unit
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.6 mg (typ.)
fSC
Min
5.3
―
―
―
―
0.07
M
A
Typ.
6.8
25
―
―
―
0.2
±0.05
Max
5.0
0.5
2.0
0.6±0.05
―
―
DF2S6.8UFS
1-1L1A
2008-04-21
―
―
Unit
μA
pF
V
V
V
0.1±0.05
A
0.48
Unit: mm
+0.02
-0.03
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DF2S6.8UFS Summary of contents
Page 1
... Symbol Test Condition V ― RWM 1mA RWM MHz 1ｍ DF2S6.8UFS 0.6±0.05 Unit 0.2 ±0. °C °C fSC ― JEDEC ― JEITA 1-1L1A TOSHIBA Weight: 0.6 mg (typ.) Min Typ. Max ― ― 5.0 5.3 6.8 ― ...
Page 2
... Marking Pin Assignment (Top View) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 (Contact discharge) Criterion: No damage to device elements ±8kV 2 DF2S6.8UFS 2008-04-21 ...
Page 3
... I-V 10 Ta=25℃ Forward Side VR side 2 0 -30 -20 - -10 V [V] Voltage V (V) 2.5 2 Reverse Side VF side 1 0 DF2S6.8UFS C -V CT- f=1MHz Ta=25℃ [V] Reverse voltage V (V) R 2008-04-21 5 ...
Page 4
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 DF2S6.8UFS 20070701-EN GENERAL 2008-04-21 ...