TD62M4600FG TOSHIBA Semiconductor CORPORATION, TD62M4600FG Datasheet - Page 2

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TD62M4600FG

Manufacturer Part Number
TD62M4600FG
Description
4ch Low Saturation Voltage Source Driver
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Supply Voltage
Breakdown Voltage
Output Current
Base Current
Fly−wheeling Diode Forward Current
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Note 1: T = 10 ms MAX. and maximum duty is less than 30%.
Note 2: T = 10 ms single pulse
Current Gain
Saturation Voltage
Transition Frequency
Leakage Current
Fly−wheeling Diode Forward Voltage
Base−Emitter Resistor
Base−Emitter Forward Voltage
CHARACTERISTIC
CHARACTERISTIC
SYMBOL
SYMBOL
I
I
V
O (PRAK)
B (PRAK)
I
h
h
B (AVE)
V
V
V
CE (sat)
V
T
T
FE (1)
FE (2)
R
V
P
I
CBO
CER
EBO
V
I
I
OL
T
f
CC
opr
stg
O
BE
BE
F
T
D
F
j
(Ta = 25°C)
(Ta = 25°C)
TEST
CUIT
CIR−
−4 (Note 1)
−2 (Note 2)
−55~150
RATING
−40~85
−0.4
−0.8
−10
−10
−10
490
150
−6
−2
2
V
V
I
I
V
V
I
I
V
C
C
F
F
CE
CE
CE
CC
CE
= −300 mA
= −450 mA, 10 ms
= −1 A, I
= 2 A, I
= −1 V, I
= −1 V, I
= −2 V, I
= −1 V, I
= −10 V
TEST CONDITION
B
B
A / ch
= −50 mA
UNIT
mW
= −25 mA
°C
°C
°C
C
C
C
C
V
V
A
A
= −0.5 A
= −1.5 A
= −0.5 A
= −2.0 A
MIN
160
60
7
TD62M4600FG
−0.13
−0.25
−0.89
−1.60
−0.84
TYP.
130
150
10
0
2006-06-14
−0.25
−0.50
MAX
−1.2
−1.5
600
−10
13
UNIT
MHz
µA
kΩ
V
V
V

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