XP1C301

Manufacturer Part NumberXP1C301
DescriptionSilicon Pnp Npn Epitaxial Planer Transistor
ManufacturerPanasonic Corporation of North America
XP1C301 datasheet
 
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Composite Transistors
XP1C301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
Features
Two elements incorporated into one package.
(Tr1 base is connected to Tr2 emitter.)
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SB709A+2SD601A
Absolute Maximum Ratings
Parameter
Symbol
Collector to base voltage
V
CBO
Collector to emitter voltage
V
CEO
Tr1
Emitter to base voltage
V
EBO
Collector current
I
C
Peak collector current
I
CP
Collector to base voltage
V
CBO
Collector to emitter voltage
V
CEO
Tr2
Emitter to base voltage
V
EBO
Collector current
I
C
Peak collector current
I
CP
Total power dissipation
P
T
Junction temperature
T
Overall
j
Storage temperature
T
stg
1 : Emitter (Tr1)
(Ta=25˚C)
2 : Base (Tr1)
Ratings
Unit
–60
V
–50
V
Marking Symbol:
–7
V
–100
mA
Internal Connection
–200
mA
60
V
50
V
7
V
100
mA
200
mA
150
mW
150
˚C
–55 to +150
˚C
Unit: mm
2.1 0.1
1.25 0.1
0.425
0.425
1
5
2
3
4
0.2 0.1
3 : Base (Tr2)
4 : Collector (Tr2)
Emitter (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
4R
Tr1
1
5
2
3
4
Tr2
1

XP1C301 Summary of contents

  • Page 1

    ... Composite Transistors XP1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification Features Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) Reduction of the mounting area and assembly cost by one half. Basic Part Number of Element ...

  • Page 2

    ... 20V 10V 10V 2mA 160 100mA 10mA 10V –2mA 200MHz 10V 1MHz CB E XP1C301 typ max Unit – 0.1 A –100 A 460 – 0.3 – 0 MHz 2.7 pF typ max Unit 0.1 A 100 A 460 0.1 ...

  • Page 3

    ... Collector current I C XP1C301 I — – 400 V = – Ta=25˚C – 350 – 300 – 250 – 200 – 150 –100 – 50 ...

  • Page 4

    ... Emitter current — 1200 V =10V CE Ta=25˚C 1000 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1 Base to emitter voltage V BE XP1C301 NF — =–5V CB f=1kHz R = Ta=25˚ 0.01 0.03 0.1 0 Emitter current Parameter — 300 I ...

  • Page 5

    ... CE G =80dB V Function=FLAT 200 Ta=25˚C 160 R =100k g 120 80 22k 4. 100 200 300 500 1000 ( A ) Collector current I C XP1C301 h — 600 V =10V CE 500 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0 0.1 0 100 ( mA ) Collector current ...