SST200 Vishay, SST200 Datasheet - Page 3

• Manufacturer Part Number: SST200
• Description: N-channel Jfets
• Manufacturer: Vishay

Document Number: 70976
S-20517—Rev. D, 15-Apr-02
TYPICAL CHARACTERISTICS (T
400
360
240
160
80
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.0
0
I
g
f = 1 kHz
DSS
Drain Current and Transconductance
fs
V
@ V
V
GS(off)
@ V
vs. Gate-Source Cutoff Voltage
GS(off)
4
0.2
V
DS
DS
DS
Output Characteristics
= –0.7 V
= 10 V, V
– Gate-Source Cutoff Voltage (V)
– Drain-Source Voltage (V)
= 10 V, V
–0.5 V
0.4
8
GS
GS
= 0 V
= 0 V
12
0.6
g
fs
I
DSS
V
16
1.5
1.2
0.9
0.6
0.3
0.8
GS
A
–0.1 V
–0.2 V
–0.3 V
–0.4 V
0
= 0 V
= 25_C UNLESS OTHERWISE NOTED)
0
Transconductance vs. Gate-Source Voltage
V
GS(off)
20
1.0
New Product
–0.1
= –0.7 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T
V
A
GS
125_C
= –55_C
– Gate-Source Voltage (V)
–0.2
25_C
–0.3
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
500
400
300
200
100
V
f = 1 kHz
0
DS
= 10 V
0
0
–0.4
V
T
GS(off)
A
T
= 25_C
A
125_C
–0.1
= 125_C
= –0.7 V
T
–0.5
A
Transfer Characteristics
= –55_C
V
V
GS
Gate Leakage Current
DG
– Gate-Source Voltage (V)
– Drain-Gate Voltage (V)
–0.2
I
D
I
D
= 100 mA
I
= 500 mA
GSS
Vishay Siliconix
25_C
SST200/200A
@ 125_C
15
I
G
–0.3
@ I
D
I
= 500 mA
GSS
V
DS
I
D
@ 25_C
= 10 V
= 100 mA
–0.4
www.vishay.com
–0.5
30
6-3